一款具有过温指示功能的高速功率运算放大器  

A High-Speed Power Operational Amplifier with Over-Temperature Indication Function

作　　者：冯仕豪 余德水 马奎 杨发顺 Feng Shihao;Yu Deshui;Ma Kui;Yang Fashun(College of Big Data and Information Engineering,Guizhou University,Guiyang 550025,China;Key Laboratory of Micro-Nano-Electronics and Sofiware Technology of Guizhou Province,Guiyang 550025,China;Semiconductor Power Device Reliability Engineering Research Center of Ministry of Education,Guiyang 550025,China)

机构地区：[1]贵州大学大数据与信息工程学院,贵阳550025 [2]贵州省微纳电子与软件技术重点实验室,贵阳550025 [3]半导体功率器件可靠性教育部工程研究中心,贵阳550025

出　　处：《半导体技术》2025年第3期273-281,312,共10页Semiconductor Technology

基　　金：贵州省科技计划项目(黔科合支撑【2023】一般283)。

摘　　要：基于80 V双极型集成电路工艺,设计了一种具有过温指示功能的高速功率运算放大器。该设计采用源极驱动-共基放大的输入级电路结构,选用p沟道结型场效应晶体管(JFET)作为输入管,实现了低输入偏置电流和高转换速率。为防止输出功率晶体管因过热而损坏,设计了过温指示及热关断模块,在139~164℃的温度区间内具有迟滞型热关断与过温指示功能。芯片测试结果显示,该电路的输入偏置电流为16.804 pA,输入失调电流为2.49 pA,开环电压增益为128.2 dB,转换速率为19.57 V/μs,增益带宽积为3.5 MHz。Based on the 80 V bipolar integrated circuit process,a high-speed power operational amplifier with an over-temperature indication function was designed.The design employs a source-driven-common base amplification input stage circuit structure and selects a p-channel junction field-effect transistor(JFET)as the input transistor,achieving low input bias current and high slew rate.In order to prevent the output power transistor from being damaged due to overheating,an over-temperature indication and thermal shutdown module was designed,featuring hysteresis thermal shutdown and over-temperature indication functions within a temperature range from 139 C to 164 C.The chip test results indicate that the circuit has an input bias current of 16.804 pA,an input offset current of 2.49 pA,an open-loop voltage gain of 128.2 dB,a conversion rate of 19.57 V/μs and a gain-bandwidth product of 3.5 MHz.

关 键 词：结型场效应晶体管(JFET)输入 功率运放 高转换速率 低失调 过温保护 

分 类 号：TN722.7[电子电信—电路与系统] TN431.1