检索规则说明:AND代表“并且”;OR代表“或者”;NOT代表“不包含”;(注意必须大写,运算符两边需空一格)
检 索 范 例 :范例一: (K=图书馆学 OR K=情报学) AND A=范并思 范例二:J=计算机应用与软件 AND (U=C++ OR U=Basic) NOT M=Visual
作 者:Feiyue Hu Pei Ding Fushuo Wu Peigen Zhang Wei Zheng Wenwen Sun Rui Zhang Longzhu Cai Bingbing Fan ZhengMing Sun
机构地区:[1]School of Materials Science and Engineering,Southeast University,Nanjing,China [2]School of Materials Science and Engineering,Zhengzhou University,Zhengzhou,China [3]The State Key Laboratory of Millimeter Waves,School of Information Science and Engineering,Southeast University,Nanjing,China [4]Department of Engineering,Faculty of Environment,Science and Economy,University of Exeter,Exeter,UK
出 处:《Carbon Energy》2024年第12期1-13,共13页碳能源(英文)
基 金:National Natural Science Foundation of China,Grant/Award Numbers:52171033,52301263,U23A20574;SEU Innovation Capability Enhancement Plan for Doctoral Students,Grant/Award Number:CXJH_SEU 24148。
摘 要:One-dimensional(1D)metals are well known for their exceptional conductivity and their ease of formation of interconnected networks that facilitate electron migration,making them promising candidates for electromagnetic(EM)attenuation.However,the impedance mismatch from high conductivity and their singular mode of energy loss hinder effective EM wave dissipation.Construction of cable structures not only optimizes impedance matching but also introduces a multitude of heterojunctions,increasing attenuation modes and potentially enhancing EM wave absorption(EMA)performance.Herein,we showcase the scalable synthesis of tin(Sn)whiskers from a Ti_(2)SnC MAX phase precursor,followed by creation of a 1D tin@carbon(Sn@C)cable structure through polymerization of PDA on their surface and annealing in argon.The EMA capabilities of Sn@C significantly surpass those of uncoated Sn whiskers,with an effective absorption bandwidth reaching 7.4 GHz.Remarkably,its maximum radar cross section reduction value of 27.85 dBm2 indicates its exceptional stealth capabilities.The enhanced EMA performance is first attributed to optimized impedance matching,and furthermore,the Sn@C cable structures have rich SnO2/C and Sn/SnO2 heterointerfaces and the associated defects,which increase interfacial and defect-induced polarization losses,as visually demonstrated by off-axis electron holography.The development of the Sn@C cable structure represents a notable advancement in broadening the scope of materials with potential applications in stealth technology,and this study also contributes to the understanding of how heterojunctions can improve EMA performance.
关 键 词:cable structure electromagnetic wave absorption interfacial polarization Sn whiskers Sn@C
分 类 号:TB34[一般工业技术—材料科学与工程] O784[理学—晶体学]
正在载入数据...
正在载入数据...
正在载入数据...
正在载入数据...
正在载入数据...
正在载入数据...
正在载入数据...
正在链接到云南高校图书馆文献保障联盟下载...
云南高校图书馆联盟文献共享服务平台 版权所有©
您的IP:216.73.216.117