Near-infrared germanium PIN-photodiodes with>1A/W responsivity  

作　　者：Hanchen Liu Toni P.Pasanen Tsun Hang Fung Joonas Isometsä Antti Haarahiltunen Steven Hesse Lutz Werner Ville Vähänissi Hele Savin 

机构地区：[1]Aalto University,Department of Electronics and Nanoengineering,Espoo,Finland [2]ElFys,Inc.,Espoo,Finland [3]Physikalisch-Technische Bundesanstalt,Berlin,Germany

出　　处：《Light(Science & Applications)》2025年第1期110-117,共8页光(科学与应用)(英文版)

基　　金：partially funded through the ATTRACT project funded by the European Union’s Horizon 2020 research and innovation programme under grant agreement No.101004462;by Business Finland(Project No.RaPtor 687/31/2019);by the Academy of Finland(Project Nos.328482 and 331313);by Tandem Industry Academia funding from the Finnish Research Impact Foundation.

摘　　要：Even though efficient near-infrared(NIR)detection is critical for numerous applications,state-of-the-art NIR detectors either suffer from limited capability of detecting incoming photons,i.e.,have poor spectral responsivity,or are made of expensive groupⅢ-Ⅴnon-CMOS compatible materials.Here we present a nanoengineered PIN-photodiode made of CMOS-compatible germanium(Ge)that achieves a verified external quantum efficiency(EQE)above 90%over a wide wavelength range(1.2-1.6μm)at zero bias voltage at room temperature.For instance,at 1.55μm,this corresponds to a responsivity of 1.15 A/W.In addition to the excellent spectral responsivity at NIR,the performance at visible and ultraviolet wavelengths remains high(EQE exceeds even 100%below 300 nm)resulting in an exceptionally wide spectral response range.The high performance is achieved by minimizing optical losses using surface nanostructures and electrical losses using both conformal atomic-layer-deposited aluminum oxide surface passivation and dielectric induced electric field-based carrier collection instead of conventional pn-junction.The dark current density of 76μA/cm2 measured at a reverse bias of 5 V is lower than previously reported for Ge photodiodes.The presented results should have an immediate impact on the design and manufacturing of Ge photodiodes and NIR detection in general.

关 键 词：RESPONSIVITY exceptional ULTRAVIOLET 

分 类 号：TN384[电子电信—物理电子学]