Heterogeneously integrated silicon-conductive oxide MOSCAP microring modulator array  

作　　者：WEI-CHE HSU SAEED ABDOLHOSSEINI HAISHENG RONG RANJEET KUMAR BERND ZECHMANN ALAN X.WANG 

机构地区：[1]Department of Electrical and Computer Engineering,Baylor University,Waco,Texas 76798,USA [2]School of Electrical Engineering and Computer Science,Oregon State University,Corvallis,Oregon 97331,USA [3]Intel Corporation,Santa Clara,California 95054,USA [4]Center of Microscopy and Imaging,Baylor University,Waco,Texas 76798,USA

出　　处：《Photonics Research》2025年第1期187-193,共7页光子学研究(英文版)

基　　金：Intel Corporation(76084461);National Science Foundation(2240352);Defense Advanced Research Projects Agency(N660012424000);Army Research Office(W911NF2410165);Air Force Office of Scientific Research(FA9550-20-1-0151);National Aeronautics and Space Administration(80NSSC23K0195).

摘　　要：In pursuit of energy-efficient optical interconnect,the silicon microring modulator(Si-MRM)has emerged as a pivotal device offering an ultra-compact footprint and capability of on-chip wavelength division multiplexing(WDM).This paper presents a 1×4 metal-oxide-semiconductor capacitor(MOSCAP)Si-MRM array gated by high-mobility titanium-doped indium oxide(ITiO),which was fabricated by combining Intel’s high-volume manufacturing process and the transparent conductive oxide(TCO)patterning with the university facility.The 1×4 Si-MRM array exhibits a high electro-optic(E-O)efficiency with V_(π)·L of 0.12 V·cm and achieves a modulation rate of(3×25+1×15)Gb/s with a measured bandwidth of 14 GHz.Additionally,it can perform on-chip WDM modulation at four equally spaced wavelengths without using thermal heaters.The process compatibility between silicon photonics and TCO materials is verified by such an industry-university co-fabrication approach for the MOSCAP Si-MRM array and demonstrated enhanced performance from heterogeneous integration.

关 键 词：MODULATOR CONDUCTIVE OXIDE 

分 类 号：TN761[电子电信—电路与系统]