In situ monitoring of the spatial distribution of oxygen vacancies at the single-particle level  

作　　者：Bei Li Zhaoke Zheng 

机构地区：[1]State Key Laboratory of Crystal Materials,Shandong University,Jinan,250100,China

出　　处：《Chinese Journal of Structural Chemistry》2024年第10期14-15,共2页结构化学(英文)

基　　金：supported by the National Natural Science Foundation of China(22222202,22072072);the Natural Science Foundation of Shandong Province(ZR2021JQ06);the National Key Research and Development Program of China(2020YFA0710301);the Shandong University Multidisciplinary Research and Innovation Team of Young Scholars(2020QNQT11 and 2020QNQT012);the Qilu Young Scholars and Outstanding Young Scholars Projects of Shandong University.

摘　　要：Defects,such as oxygen vacancies(OVs),are common in semi-conductor crystals,and play a crucial role in photocatalytic reaction.OVs are the most reactive sites on the semiconductor surface,which can rapidly excite local electrons,regulate the coordination structure of ad-sorbates,and promote the adsorption of reactant molecules[1].Simul-taneously,OVs can optimize the adsorption energy of reactants on the semiconductor surface,thereby reducing the reaction energy barrier and promoting the activation of reactive molecules.

关 键 词：reaction. reactant ADSORPTION 

分 类 号：O64[理学—物理化学]