面向超表面天线设计的95~105 GHz SiGe BiCMOS宽带数控衰减器  

Design of 95~105 GHz SiGe BiCMOS Wideband Digitally Controlled Attenuator for Metasurface Antenna

作　　者：罗将 张文柱 程强[2] LUO Jiang;ZHANG Wenzhu;CHENG Qiang(School of Electronics and Information Engineering,Hangzhou Dianzi University,Hangzhou 310018,China;State Key Laboratory of Millimeter Waves,Southeast University,Nanjing 210096,China)

机构地区：[1]杭州电子科技大学电子信息学院,杭州310018 [2]东南大学毫米波国家重点实验室,南京210096

出　　处：《电子与信息学报》2025年第2期344-352,共9页Journal of Electronics & Information Technology

基　　金：国家重点研发计划(2023YFB3811503);浙江省自然科学基金(LQ23F040009);毫米波国家重点实验室(K202316)。

摘　　要：近年来,因对电磁波具备灵活的调控能力,超表面天线技术受到来自通信、雷达以及天线领域学者的广泛关注。其中,超表面天线单元中所使用的有源调控器件,是决定整个系统性能的最关键部件之一。该文基于0.13μm SiGe BiCMOS工艺设计了一个95~105 GHz的五位宽带数控衰减器芯片。该衰减器采用了反射式和简化T型两种拓扑结构,其中4 dB与8 dB反射式衰减单元采用交叉耦合宽带耦合器代替传统的3 dB耦合器或定向耦合器,同时获得了高衰减精度和低插入损耗;而0.5 dB,1 dB,2 dB三个衰减单元均采用简化T型结构。此外,利用RC正斜率和负斜率校正网络分别应用于不同的衰减单元进行相位补偿,极大地改善了衰减器的附加相移。经过仿真验证,在95~105 GHz的感兴趣工作频率内,衰减器芯片在0.12 mm^(2)的紧凑的尺寸下实现了0~15.5 dB的衰减范围,步进为0.5 dB,基态插入损耗小于2.5 dB,幅度均方根误差小于0.31 dB,附加相移均方根误差小于2.2°。所提出的W波段衰减器可作为一个关键部件赋能集成T/R的辐散一体化超表面天线系统的硬件实现。Objective The W-band spectrum,spanning from 75 to 110 GHz,offers valuable spectrum resources,making it well-suited for high-speed wireless communication,radar detection,and biomedical imaging.Its lower atmospheric attenuation,compared to the commonly used 60 GHz band,further enhances its suitability for these applications.As modern wireless devices and electronic systems operate in increasingly complex electromagnetic environments,the demands on antenna systems are growing.These systems must independently control both radiated and scattered electromagnetic waves.Active phased array antennas,which integrate numerous transmit/receive(T/R)modules,provide precise control over the amplitude and phase of radiation elements,enabling superior manipulation of the radiated electromagnetic field.Meanwhile,rapidly advancing intelligent metasurface technology allows programmable,real-time modulation of scattered electromagnetic wave characteristics such as amplitude,phase,frequency,and polarization.This technology has attracted significant interest in the fields of communications,radar,and antenna systems.Consequently,metasurface antennas with active T/R modules offers a novel technological approach for efficient beam control of both radiated and scattered electromagnetic fields,providing new insights into solving complex electromagnetic environment problems.Digitally controlled attenuators(DSAs)are essential in metasurface antenna array systems,serving as millimeter-wave signal amplitude control modules.They primarily compensate for amplitude errors introduced by phase shifters or other components while also suppressing sidelobe levels in array antennas to enhance beam directivity.Additionally,these attenuators must exhibit minimal phase variation to reduce tracking errors,thus simplifying the calibration process.However,existing commercial millimeter-wave amplitude control chips are expensive and may face export restrictions,emphasizing the urgent need for high-performance,low-cost solutions to support the hardware implemen

关 键 词：SiGe BiCMOS W波段 衰减器 交叉耦合宽带耦合器 超表面 

分 类 号：TN433[电子电信—微电子学与固体电子学]