垂直布里奇曼法生长氧化镓单晶及其性能表征  

Growth and Properties of β-Ga_(2)O_(3)Single Crystal by Vertical Bridgman Method

作　　者：黄东阳 黄浩天 潘明艳 徐子骞 贾宁 齐红基 HUANG Dongyang;HUANG Haotian;PAN Mingyan;XU Ziqian;JIA Ning;QI Hongji(Fujia Gallium Technology Co.,Ltd.,Hangzhou 311421,China;Shanghai Institute of Optics and Fine Mechanics,Chinese Academy of Sciences,Shanghai 201800,China)

机构地区：[1]杭州富加镓业科技有限公司,杭州311421 [2]中国科学院上海光学精密机械研究所,上海201800

出　　处：《人工晶体学报》2025年第2期190-196,共7页Journal of Synthetic Crystals

基　　金：国家重点研发计划(2022YFB3605502)。

摘　　要：本文采用自主设计的垂直布里奇曼(VB)炉,通过动态模拟与实验深度耦合迭代优化的方法,建立了生长炉模型,通过优化生长炉的温场得到最佳温场,并根据模拟最佳温场对实际温场进行优化改造,成功生长出直径3英寸(1英寸=2.54 cm)的氧化镓(β-Ga_(2)O_(3))单晶。进一步加工得到最大尺寸为直径2.5英寸的(100)面β-Ga_(2)O_(3)晶圆,并对β-Ga_(2)O_(3)晶体的结晶质量和光学性能进行了表征测试。测试结果表明,β-Ga_(2)O_(3)晶体具有较高结晶质量,其紫外截止边为257.5 nm,对应光学带隙为4.78 eV,晶体的劳埃衍射斑点清晰、对称,摇摆曲线半峰全宽(FWHM)最小为39.6″。Using a self-designed vertical Bridgman(VB)furnace,a growth furnace model was established through dynamic simulation and experimental deep coupling iterative optimization method.The optimal temperature field of the growth furnace was obtained by optimizing the temperature field,and the actual temperature field was optimized and modified based on the simulated optimal temperature field.3-inch(1 inch=2.54 cm)diameter gallium oxide(β-Ga_(2)O_(3))single crystal was successfully grown in this paper.2.5 inch(100)plane β-Ga_(2)O_(3)wafers were successfully fabricated from the as-grown crystal.The crystalline quality and optical properties of β-Ga_(2)O_(3)crystal were characterized and tested.The test results indicate that,the β-Ga_(2)O_(3)crystal has high crystalline quality,with cut-off edges of ultraviolet for(100)plane is 257.5 nm,corresponding to an optical bandgap of 4.78 eV.The Laue diffraction spots of the crystal are clear and symmetrical,with a minimum full width at half maximum(FWHM)of the rocking curve at 39.6″.

关 键 词：β-Ga_(2)O_(3) 垂直布里奇曼法 晶体生长 高结晶质量 宽禁带半导体 

分 类 号：O782[理学—晶体学]