MBE同质外延生长Sn掺杂β-Ga_(2)O_(3)(010)薄膜的电子输运性质研究  

Electronic Transport Properties of Sn-Doped β-Ga_(2)O_(3)(010)Thin Films Grown by MBE Homoepitaxial Growth

作　　者：张子琦 杨珍妮 况思良 魏盛龙 徐文静 陈端阳[3] 齐红基 张洪良[1] ZHANG Ziqi;YANG Zhenni;KUANG Siliang;WEI Shenglong;XU Wenjing;CHEN Duanyang;QI Hongji;ZHANG Hongliang(State Key Laboratory of Physical Chemistry of Solid Surfaces,College of Chemistry and Chemical Engineering,Xiamen University,Xiamen 361005,China;Hangzhou Institute of Optics and Fine Mechanics,Hangzhou 311421,China;Key Laboratory of Materials for High Power Laser,Shanghai Institute of Optics and Fine Mechanics,Chinese Academy of Sciences,Shanghai 201800,China)

机构地区：[1]厦门大学化学化工学院,固体表面物理化学国家重点实验室,厦门361005 [2]杭州光学精密机械研究所,杭州311421 [3]中国科学院上海光学精密机械研究所强激光材料重点实验室,上海201800

出　　处：《人工晶体学报》2025年第2期244-254,共11页Journal of Synthetic Crystals

基　　金：国家重点研发计划(2022YFB3605501);国家自然科学基金(22275154)。

摘　　要：本文研究了利用分子束外延技术生长的非故意掺杂(UID)和锡掺杂的β-Ga_(2)O_(3)同质外延薄膜的电子输运性质。薄膜载流子浓度范围为3.2×10^(16)至2.9×10^(19) cm^(-3),载流子浓度为3.2×10^(16) cm^(-3)的非故意掺杂薄膜显示出优异的室温迁移率,为125 cm^(2)·V^(-1)·s^(-1),在80 K时的峰值迁移率为875 cm^(2)·V^(-1)·s^(-1),达到了当前MBE生长的Ga_(2)O_(3)薄膜的先进水平。利用温度相关霍尔测试表征同质外延薄膜的电子输运性质,计算得到锡掺杂剂的激活能为76.2 meV。通过散射模型的拟合计算,分析了这一系列同质外延薄膜的电子散射性质,在低温到高温过程中,来自本征缺陷的电离杂质散射及晶体中阴阳离子库仑力的极性光学声子(POP)散射限制了迁移率的增长。In this work,the electronic transport properties of unintentionally doped(UID)and tin-doped β-Ga_(2)O_(3) homoepitaxial thin films grown by molecular beam epitaxy(MBE)are reported,with electron densities ranging from 3.2×10^(16) to 2.9×10^(19) cm^(-3).The UID thin film with an electron density of 3.2×10^(16) cm^(-3) exhibits an excellent room-temperature mobility of 125 cm^(2)·V^(-1)·s^(-1) and a peak mobility of 875 cm^(2)·V^(-1)·s^(-1) at 80 K,reaching the advanced standard of MBE-grown Ga_(2)O_(3)thin films.Temperature-dependent Hall measurements were utilized to characterize the electronic transport properties of the homoepitaxial thin films,yielding a tin dopant activation energy of 76.2 meV.By fitting the scattering model,the electronic scattering properties of this series of homoepitaxial thin films were analyzed,revealing that ionized impurity(Ⅱ)scattering from intrinsic defects and polar optical phonon(POP)scattering from Coulombic forces between cations and anions in the crystal limit the mobility growth at low and high temperatures,respectively.

关 键 词：β-Ga_(2)O_(3) 外延薄膜 掺杂 激活能 迁移率 输运性质 

分 类 号：O738[理学—晶体学]