β-Ga_(2)O_(3)基MSM型日盲紫外光电探测器高温电流输运机制的研究  

Analysis of High Temperature Current Transport Mechanism of β-Ga_(2)O_(3)Based Metal-Semiconductor-Metal Type Solar-Blind Ultraviolet Photodetector

作　　者：杜桐 付俊杰 王紫石 狄静 陶春雷 张赫之[1,2] 张琦 胡锡兵 梁红伟 DU Tong;FU Junjie;WANG Zishi;DI Jing;TAO Chunlei;ZHANG Hezhi;ZHANG Qi;HU Xibing;LIANG Hongwei(School of Integrated Circuits,Dalian University of Technology,Dalian 116620,China;Jiangsu XGL Optoelectronics Co.,Ltd.,Jiangsu 214192,China)

机构地区：[1]大连理工大学集成电路学院,大连116620 [2]江苏新广联光电股份有限公司,无锡214192

出　　处：《人工晶体学报》2025年第2期319-328,共10页Journal of Synthetic Crystals

基　　金：国家自然科学基金(62104024,11875097,12075045,11975257,11961141014,62074146);大连市科技创新基金(2023JJ12GX013,2023JJ12GX016)。

摘　　要：本文成功制备了β-Ga_(2)O_(3)基金属半导体金属(MSM)型日盲紫外光电探测器。在室温下偏压为5 V时,具有高质量外延的器件的响应度达到469.6 mA/W(对应外量子效率(EQE)为229.2%),光暗电流比为5.26×10^(3)。为了研究β-Ga_(2)O_(3)基MSM型日盲紫外光电探测器在高温环境下的潜在应用,对该器件在高温下的电流-电压(I-V)和光响应(I-T)特性进行了测试,分析器件在高温下的载流子输运机制。结果表明:在300~375 K时,器件的暗电流主要由低压下的热离子场发射(TFE)和高压下的普尔-弗兰克发射(PFE)主导,由PFE模型拟合的I-V曲线可知,PFE由导带下的0.200 eV附近的缺陷引起;根据光响应特性拟合结果,得到上升时间拟合活化能为0.280 eV,下降时间拟合活化能为0.036 eV。由分析结果可知,光电流的输运过程如下:光生电子首先被导带下0.200~0.280 eV附近的缺陷能级捕获并通过PFE发射进入到导带产生光电流。光生载流子的复合过程为:光电子更倾向于被导带下的0.036 eV附近的缺陷能级捕获,进而与价带中的光生空穴复合。In this work,β-Ga_(2)O_(3) based metal-semiconductor-metal(MSM)solar-blind ultraviolet photodetector was successfully fabricated.At room temperature and a bias voltage of 5 V,the responsivity of the device with high-quality epitaxy is 469.6 mA/W(corresponding to an external quantum efficiency(EQE)of 229.2%),and the photocurrent-dark current ratio is 5.26×10^(3).In order to study the potential application of the β-Ga_(2)O_(3) based MSM type solar-blind ultraviolet detector in high temperature environment,the current-voltage(I-V)and photoresponse(I-T)characteristic of the device at high temperature were tested,and the carrier transport mechanism of the device at high temperature was analyzed.The results indicate that the dark current of the device is mainly dominated by thermionic-field emission(TFE)at low voltage and Poole-Frenkel emission(PFE)at high voltage between 300 and 375 K.The I-V curve fitted by the PFE model shows that PFE is caused by defects near 0.200 eV below the conduction band.According to the fitting results of the photoresponse characteristic,the activation energy fitted by the decay time is 0.280 eV,and activation energy fitted by the rise time is 0.036 eV.According to the analysis results,the transport process of photocurrent is as follows:photogenerated electrons are first captured by defect energy levels near 0.200 eV to 0.280 eV below the conduction band and emitted into the conduction band through PFE to generate photocurrent;the recombination process of photogenerated charge carriers is that photoelectrons tend to be captured by defect energy levels near 0.036 eV below the conduction band,and then recombine with photogenerated holes in the valence band.

关 键 词：β-Ga_(2)O_(3) 金属半导体金属 日盲紫外光电探测器 热离子场发射 普尔-弗兰克发射 缺陷 

分 类 号：O799[理学—晶体学] O47