常温大气环境下利用STM研究材料的表面态密度  

Studying surface density of states with STM at ambient conditions

作　　者：华骏杰 张竞予 李烨 王宇昊 吴明昊 王晓峰 王克东 HUA Junjie;ZHANG Jingyu;LI Ye;WANG Yuhao;WU Minghao;WANG Xiaofeng;WANG Kedong(Department of Physics,Southern University of Science and Technology,Shenzhen 518055,China)

机构地区：[1]南方科技大学理学院物理系,广东深圳518055

出　　处：《物理实验》2025年第2期57-63,共7页Physics Experimentation

基　　金：2023年度广东省本科高校教学质量与教学改革工程建设项目(No.SJZLGC202307)。

摘　　要：为使学生直观地理解态密度的物理意义并掌握研究态密度的实验方法,设计适合学生参与的常温大气下测量材料的表面态密度实验.制备具有代表性的样品石墨和金,并用STM分别扫描样品的形貌图和扫描隧道谱.分析石墨和金样品的扫描隧道谱,得到了半金属和金属的态密度特征;分析在超高真空STM中测试SnSe的扫描隧道谱,得到了典型半导体的态密度特征.To help students grasp the physical significance of density of states(DOS)and understand experimental methods for studying DOS,a comparative measurement method for the surface DOS of various materials under ambient conditions was designed and implemented that might be suitable for students’participation.Two representative samples,graphite and gold,were prepared and scanned using scanning tunneling microscopy(STM)to obtain their surface morphology images and scanning tunneling spectroscopy(STS).Analysis on the STS of these samples revealed the DOS characteristics of semimetals and metals respectively.Additionally,the STS of SnSe tested in an ultra-high vacuum STM was analyzed to obtain DOS characteristics of typical semiconductors.

关 键 词：态密度 扫描隧道显微镜 扫描隧道谱 

分 类 号：O562.2[理学—原子与分子物理] TH742[理学—物理]