Study on the piezoresistivity of Cr-doped V_(2)O_(3) thin film for MEMS sensor applications  

作　　者：Michiel Gidts Wei-Fan Hsu Maria Recaman Payo Shaswat Kushwaha Frederik Ceyssens Dominiek Reynaerts Jean-Pierre Locquet Michael Kraft Chen Wang 

机构地区：[1]Micro-and Nanosystems,Department of Electrical Engineering,KU Leuven,Kasteelpark Arenberg 10,3001 Leuven,Belgium [2]Functional Oxides Coating Center,Department of Physics and Astronomy,KU Leuven,Celestijnenlaan 200D,3001 Leuven,Belgium [3]Manufacturing Processes and Systems,Department of Mechanical Engineering,KU Leuven,Celestijnenlaan 300,3001 Leuven,Belgium [4]Flanders Make,Gaston Geenslaan 8,3001 Leuven,Belgium [5]Membraanscheidingen,Adsorptie,Katalyse en Spectroscopie voor Duurzame Oplossingen,Department of Microbial and Molecular Systems,KU Leuven,Kasteelpark Arenberg 22,3001 Leuven,Belgium

出　　处：《Microsystems & Nanoengineering》2024年第6期517-528,共12页微系统与纳米工程(英文)

摘　　要：Cr-doped V_(2)O_(3) thin film shows a huge resistivity change with controlled epitaxial strain at room temperature as a result of a gradual Mott metal-insulator phase transition with strain.This novel piezoresistive transduction principle makes Cr-doped V_(2)O_(3) thin film an appealing piezoresistive material.To investigate the piezoresistivity of Cr-doped V_(2)O_(3) thin film for implementation in MEMS sensor applications,the resistance change of differently orientated Cr-doped V_(2)O_(3) thin film piezoresistors with external strain change was measured.With a longitudinal gauge factor of 222 and a transversal gauge factor of 217 at room temperature,isotropic piezoresistivity coefficients were discovered.This results in a significant orientation-independent resistance change with stress for Cr-doped V_(2)O_(3) thin film piezoresistors,potentially useful for new sensor applications.To demonstrate the integration of this new piezoresistive material in sensor applications,a micromachined pressure sensor with Cr-doped V_(2)O_(3) thin film piezoresistors was designed,fabricated and characterized.At 20℃,a sensitivity,offset,temperature coefficient of sensitivity and temperature coefficient of offset of 21.81 mV/V/bar,-25.73 mV/V,-0.076 mV/V/bar/℃ and 0.182 mV/V/℃,respectively,were measured.This work paves the way for further research on this promising piezoresistive transduction principle for use in MEMS sensor applications.

关 键 词：material. strain. FILM 

分 类 号：O48[理学—固体物理]