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作 者:张浚坤 雷二涛 金莉 马凯 夏晨阳[2] 王茜睿 ZHANG Junkun;LEI Ertao;JIN Li;MA Kai;XIA Chenyang;WANG Xirui(Electric Power Research Institute of Guangdong Power Grid Co.,Ltd.,Guangzhou 510000,Guangdong,China;School of Electrical Engineering,China University of Mining and Technology,Xuzhou 221116,Jiangsu,China)
机构地区:[1]广东电网有限责任公司电力科学研究院,广东广州510000 [2]中国矿业大学电气工程学院,江苏徐州221116
出 处:《电气传动》2025年第3期35-42,共8页Electric Drive
基 金:南方电网重点科研项目(GDKJXM20212014)。
摘 要:现代电力电子技术的不断发展推动了IGBT在交流电机驱动、变频器、开关电源及新能源行业的广泛应用。IGBT在应用过程中,由于电路拓扑和系统工况复杂多变,栅极波形振荡的问题普遍存在,如何认识振荡机理并抑制振荡成为IGBT安全稳定应用的基础。从IGBT内部寄生参数结构和开关过程出发,详细介绍了IGBT栅极开通振荡、关断振荡和短路振荡,推导了开通栅极振荡过程的数学模型及射频振荡(关断振荡与短路振荡)的正反馈振荡机理,提出加入负反馈或降低正反馈增益的修正措施。通过改进不同振荡的实验,验证了抑制措施的有效性,提高了IGBT应用的稳定性与可靠性。The rapid development of modern power electronics technology promotes the insulated gate bipolar transistor(IGBT)wide range of applications in the AC motor drive,inverter,switching power supply and new energy industry.In the application process of IGBT,due to the complex and varied circuit topology and system conditions,the problem of gate waveform oscillation usually exists.How to understand the oscillation mechanism and suppress methods becomes the basis of IGBT security and stability application.According to the IGBT internal parasitic parameter structure and switching process,the IGBT gate turn-on oscillation,turn-off oscillation and short circuit oscillation were introduced in detail,the mathematical model of the gate oscillation process and the oscillation of the radio frequency(RF)positive feedback oscillation(turn-off oscillation and short-circuit oscillation)were deduced.The corrective measures of adding negative feedback or decreasing the positive feedback gain were put forward.By improving the experiment of different oscillations,the effectiveness of the suppression measures was verified,and the stability and reliability of IGBT application were improved.
关 键 词:绝缘栅双极型晶体管(IGBT) 栅极振荡机理 抑制方法 正反馈
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