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作 者:魏嘉欣 郝建红[1] 赵强[2] 范杰清[1] 张芳[2] 薛碧曦 董志伟[2] Wei Jiaxin;Hao Jianhong;Zhao Qiang;Fan Jieqing;Zhang Fang;Xue Bixi;Dong Zhiwei(School of Electrical and Electronic Engineering,North China Electric Power University,Beijing 102206,China;Institute of Applied Physics and Computational Mathematics,Beijing 100094,China)
机构地区:[1]华北电力大学电气与电子工程学院,北京102206 [2]北京应用物理与计算数学研究所,北京100094
出 处:《强激光与粒子束》2025年第3期151-156,共6页High Power Laser and Particle Beams
基 金:国家自然科学基金青年基金项目(12305218)。
摘 要:航天器在轨服役期间长期处于复杂恶劣的空间辐射环境,以GaAs为代表的III-V族化合物太阳能电池因具备高光电转换效率和抗辐照能力而被广泛应用于航天领域。采用有限元法,基于计算机辅助设计技术(TCAD)对GaAs太阳能电池的空间辐照损伤效应进行了研究。以AM0光谱辐照下的GaAs太阳能电池电学参数为依据,建立了单结太阳能电池结构模型和辐照损伤模型,获得了在不同电子辐照条件下电池的伏安特性曲线,结合已有实验结果验证了本文模拟结果,分析了空间环境辐照下GaAs太阳能电池电学性能退化规律。结果表明,辐照损伤缺陷使得少数载流子扩散长度减小,降低了光生载流子的收集效率,在一定电子能量下,太阳能电池电学性能的退化幅度随辐照注量水平的提高而增大。Spacecraft have to be exposed to complex and harsh space radiation environments for a long time during their in-orbit service.III-V compound solar cells,represented by GaAs,are widely used in the aerospace field due to their high photoelectric conversion efficiency and radiation resistance.The spatial radiation damage effect of GaAs solar cells was studied using finite element method and technology computer-aided design(TCAD).Based on the electrical parameters of GaAs solar cells under AM0 spectral irradiation,a single-junction solar cell structure model and irradiation damage model were established.The volt ampere characteristic curves of the cells under different electron irradiation conditions were obtained,and the simulation results in this paper were verified with existing experimental results.The degradation law of GaAs solar cell electrical performance under space environment irradiation was analyzed.The results indicate that irradiation damage defects reduce the diffusion length of minority carriers and decrease the collection efficiency of photo generated carriers.At a certain electron energy,the degradation amplitude of the electrical performance of solar cells increases with the increase of irradiation dose level.
关 键 词:GaAs太阳能电池 器件模拟 辐照损伤 电学性能
分 类 号:O57[理学—粒子物理与原子核物理]
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