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作 者:Wenbin Liu Fuping Zhang Ting Zheng Hongjiang Li Yi Ding Xiang Lv Zhipeng Gao Jiagang Wu
机构地区:[1]Department of Materials Science,Sichuan University,Chengdu 610065,China [2]Institute of Fluid Physics,China Academy of Engineering Physics,Mianyang 621900,China
出 处:《Journal of Materials Science & Technology》2024年第25期19-27,共9页材料科学技术(英文版)
基 金:supported by the National Key Re-search and Development Program of China(No.2022YFB3807402);the National Natural Science Foundation of China(Nos.U23A20567,12204327,52061130216,52032007,and 52002252);the Fundamental Research Funds for the Central Universities(No.YJ2021154);the Natural Science Foundation of Sichuan Province(No.2023NSFSC0967).
摘 要:The rapid growth of new electromechanical applications has increased the demand for ferroelectric ce-ramics with excellent piezoelectric properties and a wide temperature operating range.However,achiev-ing robust piezoelectricity and temperature stability simultaneously in lead zirconate titanate(Pb(Zr,Ti)O_(3))based piezoelectric ceramics poses a significant challenge.This study proposes a new material system of 0.98Pb_(0.84)Ba_(0.16)(Zr_(2/3)Ti_(1/3))O_(3)-0.02Pb(Sb_(1/2)Nb_(1/2))O_(3)+x wt.%Sm_(2)O_(3)(PBZT-PSN-x Sm)to address this challenge.Remarkably,the ceramics x=0.4 demonstrate excellent piezoelectric properties(includ-ing piezoelectric coefficient d33 of 610 pC/N and Curie temperature TC of 290℃)and favorable tem-perature stability(i.e.,d33 varies less than 10%within 25-200℃).The high piezoelectric properties arise from the optimized phase fraction between rhombohedral(R)and tetragonal(T)phases and the increased grain size,which enhance the lattice distortion and the domain switching under electric fields,respectively.The superior temperature stability can be attributed to stable crystal structure and domain structure.These findings indicate that PBZT-PSN-x Sm ceramics hold great promise for practical utilization in high-temperature transducers and sensors.
关 键 词:Pb(Zr Ti)O_(3)ceramics PIEZOELECTRICITY Temperature stability Sm_(2)O_(3)doping
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