热压印技术制备带覆盖层的As_(2)S_(3)硫系脊型光波导  

Preparation of As_(2)S_(3)Chalcogenide Ridge Optical Waveguide with Covering Layer by Hot Stamping Technique

作　　者：胡海[1] 邹林儿 章玉峰 彭玉发 商俊杰 沈云[1] HU Hai;ZOU Liner;ZHANG Yufeng;PENG Yufa;SHANG Junjie;SHEN Yun(School of Physics and Materials Science,Nanchang University,Nanchang 330031,China)

机构地区：[1]南昌大学物理与材料学院,南昌330031

出　　处：《光子学报》2025年第2期165-172,共8页Acta Photonica Sinica

基　　金：国家自然科学基金(No.62165008);江西省自然科学基金(No.20212ACB201007);江西省研究生创新专项资金(No.YC2023-S091)。

摘　　要：采用热压印法制备As_(2)S_(3)硫系脊型光波导过程中,波导表面会出现析晶及脱模时黏连问题,难以获得高质量的波导。为此,在As_(2)S_(3)硫系薄膜上蒸镀一层厚约70 nm的具有较高玻璃转化温度的Ge_(20)Sb_(15)Se_(65)硫系薄膜作为覆盖层,实验发现该覆盖层能抑制As_(2)S_(3)硫系脊型光波导表面退化现象,且能解决脱模时的黏连问题,获得质量良好的完整的硫系脊型光波导。利用此覆盖层,优化制备工艺参数,实验制备了脊宽约为4μm、脊高约为950 nm的As_(2)S_(3)硫系脊型光波导,具有完整的波导轮廓,其传输损耗约为0.48 dB/cm@1550 nm。Low-loss chalcogenide optical waveguide is the key basis of chalcogenide integrated photonic devices.At present,the traditional lithography and etching techniques are mainly used to prepare chalcogenide optical waveguide,but chalcogenide glass is easily corroded by alkaline solution and plasma gas during the etching process,which makes it difficult to control the size and shape of the waveguide,and deteriorates the roughness of the waveguide sidewall and surface.Hot stamping technology is a novel technique for preparing nano or submicron scale structures,which is particularly suitable for use in chalcogenide glass film materials with low glass transition temperature.The sidewall and surface of ridge optical waveguide prepared by this method are smoother,thereby reducing surface light scattering and transmission loss.In this paper,As_(2)S_(3)chalcogenide ridge optical waveguide was prepared by hot stamping method.Through the experiment,it is found that only shallow indentation appeared on the chalcogenide film when the thermoplastic temperature was near the glass transition temperature of As_(2)S_(3)chalcogenide glass(197℃).In order to better fill the mold with the chalcogenide film,the thermoplastic temperature should be increased to 250℃.However,the surface of the As_(2)S_(3)waveguide prepared at the high thermoplastic temperature will have a large number of crystallization and adhesion problems during demolding,resulting in poor surface quality and incomplete profile of the waveguide,and making it difficult to obtain high quality As_(2)S_(3)chalcogenide ridge optical waveguide.By depositing a layer of Ge_(20)Sb_(15)Se_(65)chalcogenide film with thickness of about 70 nm on the As_(2)S_(3)chalcogenide film as a covering layer,the surface degradation of the waveguide layer is inhibited by means of the similar topological connection of chalcogenide glass and the excellent thermal stability of Ge_(20)Sb_(15)Se_(65).And the simulation results show that after adding the covering layer,the energy of the basic mode

关 键 词：集成光学 脊型光波导 热压印技术 硫系玻璃 覆盖层 

分 类 号：TN252[电子电信—物理电子学]