X波段宽带高效率连续类功率放大器芯片设计  

Design of an X-band high efficiency continuous-mode power amplifier

作　　者：刘涵潇 喻忠军 范景鑫 张德生 Liu Hanxiao;Yu Zhongjun;Fan Jingxin;Zhang Desheng(Aerospace Information Research Institute,Chinese Academy of Sciences,Beijing 100190,China;School of Electronic,Electrical and Communication Engineering,University of Chinese Academy of Sciences,Beijing 101408,China)

机构地区：[1]中国科学院空天信息创新研究院,北京100190 [2]中国科学院大学电子电气与通信工程学院,北京101408

出　　处：《电子技术应用》2025年第3期39-43,共5页Application of Electronic Technique

摘　　要：为提高功率放大器的带宽和效率,基于0.25μm GaAs pHEMT ED工艺,通过控制输出级二次谐波阻抗进行波形控制,实现连续B/J类波形,设计了一款单片集成的X波段高效率连续B/J类功率放大器。放大器由两级构成,驱动级使用增强型晶体管实现高增益,输出级使用耗尽型晶体管实现高效率与瓦级的输出功率。仿真结果显示,该功率放大器在7.3~12.2 GHz的频带内实现了29~30.6 dBm的输出功率,功率增益为17~18.6 dB,功率附加效率大于50%,峰值效率为59%,输入回波损耗小于10 dB,芯片尺寸仅为2.1 mm×1.3 mm。To improve the bandwidth and efficiency of power amplifier,a monolithically integrated X-band high-efficiency continuous B/J power amplifier is designed based on the 0.25μm GaAs pseudomorphic high electron mobility transistor(pHEMT)process.Continuous B/J waveform is achieved by controlling the second harmonic impedance of the output stage.The amplifier consists of two stages,with the driver stage using enhanced transistors for high gain and the output stage using depletion transistors for high efficiency and watt-level output power.The simulation results show that the power amplifier achieves an output power of 29~30.6 dBm in the frequency band of 7.3~12.2 GHz,with a power gain of 17~18.6 dB,a power added efficiency of more than 50%,a peak efficiency of 59%,an input return loss of less than 10 dB,and a chip size of only 2.1 mm×1.3 mm.

关 键 词：功率放大器 高效率 X波段 连续类 单片微波集成电路 

分 类 号：TN722[电子电信—电路与系统]