一种带短路保护的磁隔离IGBT驱动架构  

A magnetic isolation IGBT driver architecture with short circuit protection

作　　者：刘甲俊 李飞 陈荣昕 邓玉清 肖培磊 Liu Jiajun;Li Fei;Chen Rongxin;Deng Yuqing;Xiao Peilei(The 58th Research Institute of China Electronics Technology Group,Wuxi 204135,China)

机构地区：[1]中国电子科技集团公司第五十八研究所,江苏无锡204135

出　　处：《电子技术应用》2025年第3期44-48,共5页Application of Electronic Technique

摘　　要：设计一种带短路保护的磁隔离IGBT驱动架构,该架构采用变压器隔离,集成去饱和检测电路、米勒钳位电路和软关断,当IGBT发生短路故障退出饱和区,便对器件执行软关断,并通过米勒钳位电路抑制栅极电压尖峰。同时通过故障反馈通道将故障信号反馈给前级控制器,实现对短路故障的快速响应。仿真和实测结果表明,本架构具有8 kV的隔离耐压,去饱和检测和米勒钳位阈值分别为9 V和2 V,去饱和故障响应时间为419 ns,故障报错时间为311 ns,软关断时间为136 ns。该架构实现了短路故障保护和故障反馈,已应用在某一高耐压隔离IGBT驱动器中。A magnetic isolation IGBT drive architecture with short circuit protection is designed in this paper.The architecture adopts transformer isolation,integrates desaturation detection circuit,Miller clamp circuit and soft turn-off.When IGBT exits the saturation zone due to short circuit fault,soft turn-off is performed on the device.The gate voltage spike is suppressed by Miller clamp circuit.At the same time,the fault signal is fed back to the front controller through the fault feedback channel to realize the fast response to the short-circuit fault.The simulation and measured results show that the architecture has an isolated voltage withstand of 8 kV,desaturation detection and Miller clamp threshold of 9 V and 2 V respectively,desaturation fault response time of 419 ns,fault error time of 311 ns,soft shutdown time of 136 ns.The architecture realizes short-circuit fault protection and fault feedback,and has been applied to a high voltage isolated IGBT driver.

关 键 词：短路保护 磁隔离 隔离IGBT驱动架构 

分 类 号：TN433[电子电信—微电子学与固体电子学]