A review on monolithic 3D integration:From bulk semiconductors to low-dimensional materials  

作　　者：Ziying Hu Hongtao Li Mingdi Zhang Zeming Jin Jixiang Li Wenku Fu Yunyun Dai Yuan Huang Xia Liu Yeliang Wang 

机构地区：[1]School of Integrated Circuits and Electronics,MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices,Beijing Institute of Technology,Beijing 100081,China

出　　处：《Nano Research》2025年第3期581-604,共24页纳米研究(英文版)

基　　金：fundings from the National Natural Science Foundation of China(Nos.62274013 and 92163206);the National Key Research and Development Program of China(No.2023YFB3405600);Science Fund for Creative Research Groups of the National Natural Science Foundation of China(No.12321004)。

摘　　要：Monolithic three-dimensional(M3D)integration represents a transformative approach in semiconductor technology,enabling the vertical integration of diverse functionalities within a single chip.This review explores the evolution of M3D integration from traditional bulk semiconductors to low-dimensional materials like two-dimensioanl(2D)transition metal dichalcogenides(TMDCs)and carbon nanotubes(CNTs).Key applications include logic circuits,static random access memory(SRAM),resistive random access memory(RRAM),sensors,optoelectronics,and artificial intelligence(AI)processing.M3D integration enhances device performance by reducing footprint,improving power efficiency,and alleviating the von Neumann bottleneck.The integration of 2D materials in M3D structures demonstrates significant advancements in terms of scalability,energy efficiency,and functional diversity.Challenges in manufacturing and scaling are discussed,along with prospects for future research directions.Overall,the M3D integration with low-dimensional materials presents a promising pathway for the development of next-generation electronic devices and systems.

关 键 词：monolithic three-dimensional(M3D)integration two-dimensional(2D)material logic circuit static random access memory(SRAM) resistive random access memory(RRAM) sensor OPTOELECTRONICS artificial intelligence 

分 类 号：TN43[电子电信—微电子学与固体电子学]