n型碲化铋基热电材料、器件及应用  被引量:1

n-type bismuth telluride-based thermoelectric materials,devices,and applications

作  者:彭佳怡 刘东锐 秦炳超 裴延玲 Jiayi Peng;Dongrui Liu;Bingchao Qin;Yanling Pei(Tianmushan Laboratory,Hangzhou 311115,China)

机构地区:[1]天目山实验室,杭州311115

出  处:《科学通报》2025年第6期674-684,共11页Chinese Science Bulletin

基  金:国家杰出青年科学基金(51925101);国家自然科学基金(52450001,52371090);科学探索奖、博士后创新人才支持计划(BX20230456);中国博士后科学基金(2024M754057);航空发动机及燃气轮机基础科学中心重大项目(P2021-A-IV-001-003)资助。

摘  要:碲化铋(Bi_(2)Te_(3))基热电材料,作为目前唯一商业化应用的热电材料体系,在近室温区内表现出优异的热电性能,在低品位温差发电和热电半导体制冷方面具有独特的优势,广泛应用于深空探测电源、5G通信、激光制冷、消费电子、医疗器械等关键领域.本文以n型Bi_(2)Te_(3)为主要研究对象,详尽介绍了不同的优化策略——载流子调节、织构化调控、能带工程和声子工程对该体系热电性能和力学性能优化的研究进展.同时,针对不同维度(一维热电纤维、二维热电薄膜和三维热电器件)下Bi_(2)Te_(3)基热电器件在发电与制冷领域所取得的研究成果进行展示,总结并讨论了n型Bi_(2)Te_(3)基热电材料现存的挑战以及未来可能的发展方向,以期为n型Bi_(2)Te_(3)热电材料的探索提供参考.Thermoelectric(TE)materials can directly convert electricity into thermal energy or vice versa based on Seebeck effect and Peltier effect,providing a feasible scheme to settle the energy shortage problems.To better elucidate TE properties of materials,the figure of merit,ZT=(S2σ/κ)T is introduced,where the S,σandκrepresent the Seebeck coefficient,electrical conductivity,and thermal conductivity,respectively.From the presented expression,a satisfactory TE material is supposed to have a relatively high ZT value,that is,a large Seebeck coefficient,a high electrical conductivity,and a low thermal conductivity.Bismuth telluride(Bi_(2)Te_(3))-based thermoelectric materials,as the only thermoelectric system that has been commercialized at present,are widely used in the fields of near-room temperature refrigeration and low-grade thermoelectric power generation due to their excellent thermoelectric performance in near-room temperature regions.However,due to the narrow band gap,Bi_(2)Te_(3)thermoelectric materials will undergo bipolar diffusion with rising temperature,which will worsen the Seebek coefficient and thus affect their thermoelectric properties.Therefore,for the Bi_(2)Te_(3)system,how to increase the band gap and increase the carrier concentration to suppress bipolar diffusion has always been the key research direction.For the improvement of thermoelectric performance,the main difficulty lies in the coupling relationship between the thermoelectric performance parameters that determine ZT values,so it is a great challenge to find the decoupling strategy between parameters.In recent twenty years,researchers have explored various strategies to optimize the performance of Bi_(2)Te_(3)-based thermoelectric materials,including carrier adjustment,texture adjustment,energy band engineering,and phonon engineering,etc.In general,because n-type Bi_(2)Te_(3)-based thermoelectric materials are mostly“single crystal-like”obtained by zone melting or directional solidification,they are more anisotropic than p-type mater

关 键 词:热电技术 n型碲化铋 热电器件 热电性能 力学性能 

分 类 号:F42[经济管理—产业经济]

 

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