In situ seed layer bandgap engineering leading to the conduction band offset reversion and efficient Sb_(2)Se_(3)solar cells with high open-circuit voltage  

作　　者：Yanting Jiang Weiyu Wang Zhirong Chen Zhenyu Fang Qiqiang Zhu Qiao Zheng Jionghua Wu Hui Deng Weihuang Wang Shuying Cheng 

机构地区：[1]Fuzhou University,Institute of Micronano Devices&Solar Cells,College of Physics&Information Engineering,Fuzhou 350108,China [2]Jiangsu Collaborative Innovation Center for Photovoltaic Science and Engineering,Changzhou 213164,Jjiangsu,China

出　　处：《Journal of Energy Chemistry》2025年第2期201-212,I0006,共13页能源化学(英文版)

基　　金：supported by the National Natural Science Foundation of China(62305064);the Research Start-up Fund for Young Teachers of Fuzhou University(602592);the Young and Middleaged Teacher Education Research Project of Fujian Province(JAT220011);the Fujian Science&Technology Innovation Laboratory Optoelectronic Information of China(Grant No.2021ZZ124).

摘　　要：Sb_(2)Se_(3)solar cells have achieved a power conversion efficiency(PCE)of over 10%.However,the serious open-circuit voltage deficit(VOC-deificit),induced by the hard-to-control crystal orientation and heterojunction interface reaction,limits the PCE of vapor transport deposition(VTD)processed Sb_(2)Se_(3)solar cells.To overcome the VOC-deficit problem of VTD processed Sb_(2)Se_(3)solar cells,herein,an in-situ bandgap regulation strategy is innovatively proposed to prepare a wide band gap Sb2(S,Se)3seed layer(WBSL)at CdS/Sb_(2)Se_(3)heterojunction interface to improve the PCE of Sb_(2)Se_(3)solar cells.The analysis results show that the introduced Sb2(S,Se)3seed layer can enhance the[001]orientation of Sb_(2)Se_(3)thin films,broaden the band gap of heterojunction interface,and realize a"Spike-like"conduction band alignment with ΔE_(c)=0.11 eV.In addition,thanks to the suppressed CdS/Sb_(2)Se_(3)interface reaction after WBSL application,the depletion region width of Sb_(2)Se_(3)solar cells is widened,and the quality of CdS/Sb_(2)Se_(3)interface and the carrier transporting performance of Sb_(2)Se_(3)solar cells are significantly improved as well.Moreover,the harmful Se vacancy defects near the front interface of Sb_(2)Se_(3)solar cells can be greatly diminished by WBSL.Finally,the PCE of Sb_(2)Se_(3)solar cells is improved from 7.0%to 7.6%;meanwhile the VOCis increased to 466 mV which is the highest value for the VTD derived Sb_(2)Se_(3)solar cells.This work will provide a valuable reference for the interface and orientation regulation of antimony-based chalcogenide solar cells.

关 键 词：Seed-layer Crystal orientation Carrier transport Open circuit voltage deficit Band gap alignment 

分 类 号：TM914.4[电气工程—电力电子与电力传动]