Cu gradient design to attain high efficient solution-processed CuIn(S,Se)2 solar cells  

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作  者:Xuejun Xu Rutao Meng Yue Liu Han Xu Jianpeng Li Yi Zhang 

机构地区:[1]Institute of Photoelectronic Thin Film Devices and Technology,State Key Laboratory of Photovoltaic Materials and Cells,and Engineering Research Center of Thin Film Optoelectronics Technology,Ministry of Education,Nankai University,Tianjin300350,China

出  处:《Journal of Energy Chemistry》2025年第2期213-222,I0006,共11页能源化学(英文版)

基  金:supported by the National Natural Science Foundation of China(U1902218).

摘  要:Solution-processed chalcopyrite solar cells are widely regarded as a promising alternative method in reducing the cost compared with vacuum-based techniques.It is noted that the absorber layer usually needs to be prepared under a high insert pressure(~1.6 atm)to suppress element loss or under a mild pressure but additional surface etching is needed for fabricating high efficient solar cell.Herein,a copper gradient structured precursor is proposed to prepare CuIn(S,Se)_(2)(CISSe)film under a mild pressure(1.1 atm).The designed gradient Cu not only promotes crystal grain growth and tailors the defects,but also avoids the surface etching of the formed CISSe film for the fabrication of high efficient solar cells.Further,Cu gradient design decreases the conduction band offset of heterojunction,boosting the carriers transport across the p-n heterojunction.Accordingly,a 13,35%efficient CISSe solar cell,comparable to the high efficient CISSe solar cell prepared by this method under high pressure or with film surface etching,is fabricated.This work provides a facile pathway to fabricate high efficient solution-processed chalcopyrite solar cell,avoiding high selenization pressure and film etching,and shows huge potential for solutionprocessed copper-based solar cells.

关 键 词:CISSe Cu gradient Crystal grain growth Defect passivation Band alignment Carrier transport 

分 类 号:TM914.4[电气工程—电力电子与电力传动] TB383.2[一般工业技术—材料科学与工程]

 

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