Efficiency improvement for post-sulfurized CIGS solar cells enabled by in situ Na doping  

作　　者：Zeran Gao Yuchen Xiong Jiawen Wang Shanshan Tian Wanlei Dai Haoyu Xu Xinzhan Wang Chao Gao Yali Sun Wei Yu 

机构地区：[1]National-Local Joint Engineering Laboratory of New Energy Photovoltaic Devices,Key Laboratory of Brain-like Neuromorphic Devices and Systems of Hebei Province,Hebei University

出　　处：《Journal of Energy Chemistry》2025年第2期324-332,I0007,共10页能源化学(英文版)

基　　金：supported by the National Natural Science Foundation of China(62204074);the Hebei Natural Science Foundation(F2022201061,F2023201025);the Open bidding for selecting the best candidates of Baoding(2023chuang206);the High-level Talent Research Startup Project of Hebei University(521100221085);the Post-graduate's Innovation Fund Project of Hebei University(HBU2024BS030).

摘　　要：Despite sulfurization offers the advantage of improving the photovoltaic performance in preparing Cu(In,Ga)Se2(CIGS)absorbers,deep level defects in the absorber and poor energy level alignment on the front surface are still main obstacles limiting the improvement of power co nversion efficiency(PCE)in sulfided CIGS solar cells.Herein,an in-situ Na doping strategy is proposed,in which the tailing effect of crystal growth is used to promote the sulfurization of CIGS absorbers.It is found that the grain growth is supported by Na incorporating due to the enrichment of NaSe_(x)near the upper surface.The high soluble Na during grain growth can not only suppress intrinsic In_(Cu) donor defects in the absorber,but also tailor S distribution in bulk and the band alignment at the heterojunction,which are both beneficial for the effective electron carriers.Meanwhile,the Na aggregation near the bottom of the absorber also contributes to the crystalline quality increasing and favorable ultra-thin MoSe_(2) formation at back contact,resulting in a reduced barrier height conducive to hole transport.PCE of the champion device is as high as 16.76%with a 28%increase.This research offers new insights into synthesizing CIGS solar cells and other chalcogenide solar cells with superior cell performance when using an intense sulfurization process.

关 键 词：CIGS SULFURIZATION In situ doping DEFECT CBO 

分 类 号：TM9[电气工程—电力电子与电力传动]