Lattice plainification and band engineering lead to high thermoelectric cooling and power generation in n-type Bi2 Te3 with mass production  

作　　者：Dongrui Liu Shulin Bai Yi Wen Jiayi Peng Shibo Liu Haonan Shi Yichen Li Tao Hong Huiqiang Liang Yongxin Qin Lizhong Su Xin Qian Dongyang Wang Xiang Gao Zhihai Ding Qian Cao Qing Tan Bingchao Qin Li-Dong Zhao 

机构地区：[1]School of Materials Science and Engineering,Beihang University,Beijing 100191,China [2]Center for Bioinspired Science and Technology,Hangzhou International Innovation Institute,Beihang University,Hangzhou 311115,China [3]Hebei Key Laboratory of Optic-Electronic Information and Materials,College of Physics Science and Technology,Hebei University,Baoding 071002,China [4]School of Materials Science and Engineering,Taiyuan University of Science and Technology,Taiyuan 030024,China [5]Key Laboratory of Materials Physics of Ministry of Education School of Physics,Zhengzhou University,Zhengzhou 450001,China [6]Center for High Pressure Science and Technology Advanced Research(HPSTAR),Beijing 100094,China [7]Huabei Cooling Device Co.LTD,Langfang 065400,China [8]Tianmushan Laboratory,Hangzhou 311115,China

出　　处：《National Science Review》2025年第2期270-279,共10页国家科学评论(英文版)

基　　金：supported by the Tencent Xplorer Prize,the National Natural Science Foundation of China(52450001 and 22409014);the Beijing Natural Science Foundation(JQ18004);the Overseas Expertise Introduction Project for Discipline Innovation(111 Project)(B17002);the National Key Research and Development Program of China(2023YFB3809400);support from the National Science Fund for Distinguished Young Scholars(51925101);support from the China National Postdoctoral Program for Innovative Talents(BX20230456);China Postdoctoral Science Foundation(2024M754057);support from the China Postdoctoral Science Foundation(2024M754059);support from the National Natural Science Foundation of China(12204156);the China Postdoctoral Science Foundation(2023TQ0315 and 2023M743224).

摘　　要：Thermoelectrics can mutually convert between thermal and electrical energy,ensuring its utilization in both power generation and solid-state cooling.Bi_(2) Te_(3) exhibits promising room-temperature performance,making it the sole commercially available thermoelectrics to date.Guided by the lattice plainification strategy,we introduce trace amounts of Cu into n-type Bi_(2)(Te,Se)_(3)(BTS)to occupy Bi vacancies,thereby simultaneously weakening defect scattering and modulating the electronic bands.Meanwhile,the interstitial Cu can bond with the BTS matrix to form extra electron transport pathways.The multiple occupations of Cu substantially boost carrier mobility and electrical performance.Consequently,the BTS+0.2%Cu achieves a room-temperature ZT of∼1.3 with an average ZT_(ave) of∼1.2 at 300-523 K.Moreover,the kilogram-scale ingot designed for mass production also exhibits high uniformity.Finally,we fabricate a full-scale device that achieves an excellent conversion efficiency of∼6.4%and a high coolingTmax of∼70.1 K,both of which outperform commercial devices.

关 键 词：THERMOELECTRIC n-type Bi_(2)Te_(3) lattice plainification carrier mobility thermoelectric device 

分 类 号：F42[经济管理—产业经济]