基于范德华层状晶体CuInP2S6的宽工作温度范围紫外光电探测器件研究  

Wide Operating Temperature Range UV Photodetector Based on van der Waals Layered Crystal CuInP_(2)S_(6)

作　　者：陈梦瑶 陈禹行 罗中慎 陈阳 房勇 韩志达[1,2] 王顺 CHEN Mengyao;CHEN Yuhang;LUO Zhongshen;CHEN Yang;FANG Yong;HAN Zhida;WANG Shun(School of Electronic and Information Engineering,Changshu Institute of Technology,Changshu 215500;Jiangsu Key Laboratory of Advanced Functional Materials,Changshu Institute of Technology,Changshu 215500;School of Physical Science and Technology,Soochow University,Suzhou 215000,China)

机构地区：[1]常熟理工学院电子信息工程学院,江苏常熟215500 [2]常熟理工学院江苏省新型功能材料重点建设实验室,江苏常熟215500 [3]苏州大学物理科学与技术学院,江苏苏州215000

出　　处：《常熟理工学院学报》2025年第2期1-6,共6页Journal of Changshu Institute of Technology

摘　　要：多元素范德华层状材料具有丰富的结构和物理特性,为拓展二维材料光电子器件提供了更多的可能性.本工作系统研究了四元范德华金属磷硫化物CuInP_(2)S_(6)的光电探测性能.器件对405 nm紫外光表现出良好的光电响应,光响应度达到0.22 mA/W.CuInP_(2)S_(6)的光学吸收和离子电导对温度具有依赖性,在高温(77℃)下表现出更加优异的光电性能.本研究为实现极端条件下光电器件的稳定工作提供了新的范例,也有助于进一步开发二维半导体的多功能化应用.Multielement van der Waals(vdW)layered materials,with their rich structural and physical properties,offer numerous possibilities for expanding two-dimensional(2D)material-based optoelectronic devices.This work systematically investigates the photodetection performance of the quaternary vdW metal thiophosphate CuInP_(2)S_(6).The device exhibits excellent photo-response to 405 nm ultraviolet light,achieving a photo-responsivity of 0.22 mA/W.Notably,the optical absorption and ionic conductivity of CuInP_(2)S_(6)exhibit temperature dependence,manifesting even superior optoelectronic properties at high temperature(77℃).In summary,this study provides a new paradigm for achieving stable operation of optoelectronic devices under extreme circumstances and contributes to further developments of multifunctional applications of 2D semiconductors.

关 键 词：金属磷硫化物 层状材料 CuInP_(2)S_(6) 光电探测 高温器件 

分 类 号：O482.7[理学—固体物理]