物理气相沉积法在泡沫钛基底上生长硒化铟纳米棒研究  

A Research on the Growth of In_(2)Se_(3) Nanorods on Titanium Foam Substrate by Physical Vapor Deposition

作　　者：侯尹慧 刘曦 HOU Yinhui;LIU Xi(General Education Department,Anhui Xinhua University,Hefei 230088,China)

机构地区：[1]安徽新华学院通识教育部,合肥230088

出　　处：《常熟理工学院学报》2025年第2期26-29,共4页Journal of Changshu Institute of Technology

基　　金：安徽省高校优秀青年科研项目“铌酸盐中几种稀土离子发光特性及温度传感的研究”(2023AH030085)。

摘　　要：本文基于一维纳米材料的气—液—固(Vapor-Liquid-Solid,VLS)生长机理,采用简单的物理气相沉积法,以硒化铟(In_(2)Se_(3))粉末为前驱体,在镀金(Au)的泡沫钛基底上实现生长出高密度的一维In_(2)Se_(3)纳米棒.通过扫描电子显微镜(Scanning Electron Microscope,SEM)的结果表明,相比于普通的单晶硅基底,在泡沫钛基底上生长的一维In_(2)Se_(3)纳米棒具有更高的密度,且泡沫钛基底能够重复使用,在提高制备效率的同时极大降低了制备成本.In this research,a simple physical vapor deposition method is used to grow high-density onedimensional indium selenide(In_(2)Se_(3))nanorods on gold plated(Au)titanium foam substrate using In_(2)Se_(3) powder as precursor,based on the Vapour-Liquid-Solid(Vapor-Liquid-Solid,VLS)growth mechanism of one-dimensional nanomaterials.The scanning electron microscope(Scanning Electron Microscope,SEM)is used to characterize the morphology.The result shows that compared with the common monocrystalline silicon substrate,the onedimensional In_(2)Se_(3) nanorods grown on titanium foam substrate have higher density.In addition,using titanium foam substrate can improve preparation efficiency and can be reused to greatly reduce the preparation cost.

关 键 词：泡沫钛基底 物理气相沉积法 VLS In_(2)Se_(3)纳米棒 

分 类 号：O469[理学—凝聚态物理]