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作 者:徐浩文 孙泽军 韩睿 陈世洪 王冲[1] 黄淑春 李伟青[2] 刘欢[1] 刘大猛[1] XU Haowen;SUN Zejun;HAN Rui;CHEN Shihong;WANG Chong;HUANG Shuchun;LI Weiqing;LIU Huan;LIU Dameng(State Key Laboratory of Tribology in Advanced Equipment,Tsinghua University,Beijing 100084,China;China University of Geosciences,Beijing 100083,China)
机构地区:[1]清华大学高端装备界面科学与技术全国重点实验室,北京100084 [2]中国地质大学,北京100083
出 处:《清华大学学报(自然科学版)》2025年第2期385-391,共7页Journal of Tsinghua University(Science and Technology)
基 金:国家杰出青年科学基金项目(52425503);国家自然基金委面上项目(52475199,52075284);国家自然科学基金原创探索项目(52350380);青年科学基金项目(52105195)。
摘 要:高端装备制造业经历从传统手工制造到数字智能制造的转型,推动了制造精度的提升。在航空航天、半导体制造等领域,对高端装备核心零部件的可靠性与耐用性要求日益增加,因此摩擦引起的微观缺陷成为重要研究方向。摩擦微观缺陷是指材料微观结构中的细微变化,包括微裂纹和由摩擦引起的相变等,这些微观缺陷在正常条件下可能不易察觉,但其累积效应会对整体性能产生显著影响,但目前缺乏针对摩擦微观缺陷影响半导体发光特性的系统研究。利用机械剥离法制备无缺陷的单层二硫化钼(MoS_(2))材料,并通过原子力显微镜引入摩擦微观缺陷,随后使用光致发光光谱和Raman显微镜对其光学特性进行了表征。实验结果显示,摩擦微观缺陷引入了新的缺陷能级,导致发光强度下降和激子寿命缩短。同时,在低温条件下,缺陷峰逐渐主导光致发光特征,表明摩擦微观缺陷显著影响材料的光学性能。这项研究为优化光电子器件提供了理论依据,并强调了对缺陷控制的重要性,以提升高端装备零件的性能和效率。[Objective]The rapid evolution of the high-end equipment manufacturing industry,from traditional manual methods to advanced digital intelligent manufacturing,has significantly improved production precision and contributed to technological advancements across various sectors.As the demand for the reliability and durability of critical components in aerospace,semiconductor manufacturing,and other industries continues to rise,there is an increasing focus on understanding microscale defects caused by friction.These friction-induced microdefects,including microcracks and phase transitions,present significant challenges.Although these defects are often subtle and not easily observed under standard conditions,their cumulative effects can significantly impact material performance.Currently,systematic investigations into the influence of friction-induced defects on the optical properties of semiconducting materials remain limited.[Methods]This research addresses this gap by focusing on monolayer molybdenum disulfide(MoS_(2)),a widely studied two-dimensional(2D)material known for its exceptional electronic and optical properties. Monolayer MoS_(2) samples, free of defects, were prepared through the mechanical exfoliationmethod. Microscale friction-induced defects were introduced via atomic force microscopy under controlled loading conditions toensure reproducibility and minimize significant structural damage. After defect introduction, the optical properties wereanalyzed via photoluminescence (PL) spectroscopy and Raman microscopy. [Results]The experimental results showed thatfriction-induced defects generated new defect energy levels within the MoS_(2) structure. These defect states served asnon-radiative recombination centers, leading to a substantial reduction in PL intensity and exciton lifetime. Steady-state PLmeasurements showed a significant decrease in fluorescence intensity in defect-affected regions compared with pristine regions.Time-resolved PL spectroscopy further quantified the reduction in exciton lifetime,
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