Achieving over 95% yield of sub-1 ppm BER with retention over 10 years at 125 ℃ and endurance of 1 × 10^(12) cycles towards automotive non-volatile RAM applications  

作　　者：Dinggui Zeng Fantao Meng Ruofei Chen Yang Gao Yihui Sun Junlu Gong Yongzhao Peng Qijun Guo Zhixiao Deng Weiming He Baoyu Xiong Jia Hou Jichao Li Wei Fang Qiang Dai Yaohua Wang Shikun He 

机构地区：[1]Zhejiang Hikstor Technology Company Ltd.,Hangzhou 311300,China

出　　处：《Journal of Semiconductors》2025年第3期68-73,共6页半导体学报(英文版)

基　　金：supported by National Science and Technology Major Project (2020AAA0109003);the support from Hangzhou Innovation Team Program (TD2022018)。

摘　　要：Magnetic tunnel junction(MTJ) based spin transfer torque magnetic random access memory(STT-MRAM) has been gaining tremendous momentum in high performance microcontroller(MCU) applications. As e Flash-replacement type MRAM approaches mass production, there is an increasing demand for non-volatile RAM(nv RAM) technologies that offer fast write speed and high endurance. In this work, we demonstrate highly reliable 4 Mb nv RAM type MRAM suitable for industry and auto grade-1 applications. This nv RAM features retention over 10 years at 125 ℃, endurance of 1 × 10^(12)cycles with 20 ns write speed, making it ideal for applications requiring both high speed and broad temperature ranges. By employing innovative MTJ materials, process engineering, and a co-optimization of process and design, reliable read and write performance across the full temperature range between -40 to 125 ℃, and array yield that meets sub-1 ppm error rate was significantly improved from 0 to above 95%, a concrete step toward applications.

关 键 词：magnetic random access memory(MRAM) non-volatile RAM(nvRAM) magnetic tunnel junction(MTJ) sub-1 ppm array yield reliability 

分 类 号：TN40[电子电信—微电子学与固体电子学] TP333[自动化与计算机技术—计算机系统结构]