Charge carrier management via semiconducting matrix for efficient self-powered quantum dot infrared photodetectors  

作　　者：Jianfeng Ding Xinying Liu Yueyue Gao Chen Dong Gentian Yue Furui Tan 

机构地区：[1]Key Laboratory of Photovoltaic Materials,School of Future Technology,Henan University,Kaifeng 475004,China

出　　处：《Journal of Semiconductors》2025年第3期74-81,共8页半导体学报(英文版)

基　　金：supported by the National Natural Science Foundation of China (No. 62204079);the Science and Technology Development Project of Henan Province (Nos.202300410048, 202300410057);the China Postdoctoral Science Foundation (No. 2022M711037);the Intelligence Introduction Plan of Henan Province in 2021 (No. CXJD2021008);Henan University Fund。

摘　　要：Quantum dot(QD)-based infrared photodetector is a promising technology that can implement current monitoring,imaging and optical communication in the infrared region. However, the photodetection performance of self-powered QD devices is still limited by their unfavorable charge carrier dynamics due to their intrinsically discrete charge carrier transport process. Herein, we strategically constructed semiconducting matrix in QD film to achieve efficient charge transfer and extraction.The p-type semiconducting CuSCN was selected as energy-aligned matrix to match the n-type colloidal PbS QDs that was used as proof-of-concept. Note that the PbS QD/CuSCN matrix not only enables efficient charge carrier separation and transfer at nano-interfaces but also provides continuous charge carrier transport pathways that are different from the hoping process in neat QD film, resulting in improved charge mobility and derived collection efficiency. As a result, the target structure delivers high specific detectivity of 4.38 × 10^(12)Jones and responsivity of 782 mA/W at 808 nm, which is superior than that of the PbS QD-only photodetector(4.66 × 10^(11)Jones and 338 mA/W). This work provides a new structure candidate for efficient colloidal QD based optoelectronic devices.

关 键 词：quantum dot semiconducting matrix ligand exchange self-powered photodetectors 

分 类 号：TN215[电子电信—物理电子学]