Calculation of the carrier dynamics and impedance spectroscopy model in quantum well infrared photodetectors  

作　　者：Chenzhe Hu Yuyu Bu Xianying Dai Fengqiu Jiang Yue Hao 

机构地区：[1]Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices,School of Microelectronics,Xidian University,X’ain 710071,China

出　　处：《Journal of Semiconductors》2025年第3期89-95,共7页半导体学报(英文版)

基　　金：financially supported by the National Natural Science Foundation of China (Grant No. 61991442)。

摘　　要：Quantum well infrared photodetectors(QWIPs) based on intersubband transitions hold significant potential for high bandwidth operation. In this work, we establish a carrier transport optimization model incorporating electron injection at the emitter to investigate the carrier dynamics time and impedance spectroscopy in GaAs/AlGaAs QWIPs. Our findings provide novel evidence that the escape time of electrons is the key limiting factor for the 3-dB bandwidth of QWIPs. Moreover, to characterize the impact of carrier dynamics time and non-equilibrium space charge region on impedance, we developed an equivalent circuit model where depletion region resistance and capacitance are employed to describe non-equilibrium space charge region. Using this model, we discovered that under illumination, both net charge accumulation caused by variations in carrier dynamics times within quantum wells and changes in width of non-equilibrium space charge region exert different dominant influences on depletion region capacitance at various doping concentrations.

关 键 词：quantum well infrared photodetectors(QWIPs) carrier dynamics time impedance spectroscopy equivalent circuit model 3-dB bandwidth 

分 类 号：TN3[电子电信—物理电子学]