High quality 6-inch single-crystalline AlN template for E-mode HEMT power device  

作　　者：Zhiwen Liang Shangfeng Liu Ye Yuan Tongxin Lu Xiaopeng Li Zirong Wang Neng Zhang Tai Li Xiangdong Li Qi Wang Shengqiang Zhou Kai Kang Jincheng Zhang Yue Hao Xinqiang Wang 

机构地区：[1]Songshan Lake Materials Laboratory,Dongguan 523808,China [2]Guangzhou Wide Bandgap Semiconductor Innovation Center,Guangzhou Institute of Technology,Xidian University,Guangzhou 510555,China [3]School of Physical Sciences,Great Bay University,Dongguan 523808,China [4]Helmholtz-Zentrum Dresden-Rossendorf,Institute of Ion Beam Physics and Materials Research,Bautzner Landstrasse 400,01328,Dresden,Germany [5]Dongguan Institute of Opto-Electronics Peking University,Dongguan 523808,China [6]Sinopatt.Technology Co.,Ltd,Songshan Lake,Dongguan 523808,China [7]State Key Laboratory of Artificial Microstructure and Mesoscopic Physics,School of Physics,Nan-oOptoelectronics Frontier Center of Ministry of Education(NFC-MOE),Peking University,Beijing 100871,China [8]State Key Laboratory of Wide Bandgap Semiconductor Devices and Integrated Technology,School of Microelectronics,Xidian University,Xi’an 710071,China

出　　处：《Journal of Semiconductors》2025年第3期96-101,共6页半导体学报(英文版)

基　　金：supported by the National Key R&D Program of China(No.2022YFE0140100);the National Natural Science Foundation of China(Nos.52273271 and 62321004);partly supported by the Key R&D Program of Guangdong Province(No.2020B01074003)。

摘　　要：In the present work,the high uniform 6-inch single-crystalline AlN template is successfully achieved by high temperature annealing technique,which opens up the path towards industrial application in power device.Moreover,the outstanding crystalline-quality is confirmed by Rutherford backscattering spectrometry(RBS).In accompanied with the results from X-ray diffraction,the RBS results along both[0001]and[1213]reveal that the in-plane lattice is effectively reordered by high temperature annealing.In addition,the constantΦ_(epi)angle between[0001]and[1213]at different depths of 31.54°confirms the uniform compressive strain inside the AlN region.Benefitting from the excellent crystalline quality of AlN template,we can epitaxially grow the enhanced-mode high electron mobility transistor(HEMT)with a graded AlGaN buffer as thin as only~300 nm.Such an ultra-thin AlGaN buffer layer results in the wafer-bow as low as 18.1μm in 6-inch wafer scale.The fabricated HEMT devices with 16μm-L_(GD)exhibits a threshold voltage(V_(TH))of 1.1 V and a high OFF-state breakdown voltage(V_(BD))over 1400 V.Furthermore,after 200 V high-voltage OFF-state stress,the current collapse is only 13.6%.Therefore,the advantages of both 6-inch size and excellent crystallinity announces the superiority of single-crystalline AlN template in low-cost electrical power applications.

关 键 词：SINGLE-CRYSTALLINE allium nitride TEMPLATE E-mode HEMT 

分 类 号：TN386[电子电信—物理电子学]