Sb‐Se‐based electrical switching device with fast transition speed and minimized performance degradation due to stable mid‐gap states  

作　　者：Xianliang Mai Qundao Xu Zhe Yang Huan Wang Yongpeng Liu Yinghua Shen Hengyi Hu Meng Xu Zhongrui Wang Hao Tong Chengliang Wang Xiangshui Miao Ming Xu 

机构地区：[1]Wuhan National Laboratory for Optoelectronics,School of Integrated Circuits,Huazhong University of Science and Technology,Wuhan,China [2]Department of Electrical and Electronic Engineering,The University of Hong Kong,Hong Kong,China [3]Hubei Yangtze Memory Laboratories,Wuhan,China

出　　处：《Electron》2025年第1期130-140,共11页电子(英文)

基　　金：National Natural Science Foundation of China,Grant/Award Number:62174060;National Science and Technology Major Project of China,Grant/Award Number:2022ZD0117600;Hubei Key Laboratory of Advanced Memory,and the Fundamental Research Funds for the Central Universities,Grant/Award Number:2021GCRC051。

摘　　要：Chalcogenide glass has a unique volatile transition between high‐and low‐resistance states under an electric field,a phenomenon termed ovonic threshold switching(OTS).This characteristic is extensively uti-lized in various electronic memory and computational devices,particu-larly as selectors for cross‐point memory architectures.Despite its advantages,the material is susceptible to glass relaxation,which can result in substantial drifts in threshold voltage and a decline in off‐current performance over successive operational cycles or long storage time.In this study,we introduce an OTS device made from stoichio-metric Sb_(2)Se_(3) glass,which retains an octahedral local structure within its amorphous matrix.This innovative material exhibits outstanding OTS capabilities,maintaining minimal degradation despite undergoing over 10^(7) operating cycles.Via comprehensive first‐principles calculations,our findings indicate that the mid‐gap states in amorphous Sb_(2)Se_(3) predom-inantly stem from the atomic chains characterized by heteropolar Sb‐Se bonds.These bonds exhibit remarkable stability,showing minimal alteration over time,thereby contributing to the overall durability and consistent performance of the material.Our findings not only shed light on the complex physical origins that govern the OTS behavior but also lay the groundwork for creating or optimizing innovative electrical switching materials.

关 键 词：chalcogenide glass first-principles calculation ovonic threshold switching phase change memory Sb_(2)Se_(3) 

分 类 号：TG1[金属学及工艺—金属学]