Impact of neutron radiation induced defects on the surge current robustness of silicon carbide P‐intrinsic‐N diodes  

作　　者：Haoshu Tan Lin Zhang Zhiqiang Li Jun Tao Li Peng Dong 

机构地区：[1]Microsystem and Terahertz Research Centerand Institute of Electronic Engineering China Academy of Engineering Physics,Mianyang,China

出　　处：《Electron》2025年第1期141-150,共10页电子(英文)

基　　金：National Natural Science Foundation of China,Grant/Award Number:12275244。

摘　　要：Surge current(SC)capability is one of the main aspects of reliability for silicon carbide(SiC)power devices.In this work,the influences of neutron radiation‐induced defects on the SC capability and reliability of SiC P‐intrinsic‐N(PiN)diodes were comprehensively investigated.It was found that the surge capability of the diodes can be deteriorated even under the slightly enhanced formation of carbon‐vacancy‐related Z_(1/2) and EH_(6/7 )defects introduced by neutron irradiation.Surprisingly,it was found that the forward voltage(V_(F))decreases with the increased SC and the stress cycles in the irradiated diodes,which is usually found to in-crease under the SC tests and attributed to the bipolar degradation(BPD).By using technology computer‐aided design simulation and deep‐level transient spectroscopy characterization,it was found that the sig-nificant self‐heating during surge stress leads to the annealing effect on the Z_(1/2) defects through the promoted recombination with the nearest and second neighbor carbon interstitials injected by irradiation,which thus plays a dominant role in the decrease of VF over the BPD.

关 键 词：defects generation degradation mechanism neutron irradiation SiC PiN diodes surge current stress 

分 类 号：TN3[电子电信—物理电子学]