A new strategy for fabricating low haze p‑type CuI film  

作　　者：Hui Sun Rui‑Song You Yi‑Chen Wang Shu‑Lin Luo Wan‑Xia Wang 

机构地区：[1]School of Space Science and Physics,Shandong Key Laboratory of Optical Astronomy and Solar‑Terrestrial Environment,Shandong University,Weihai 264209,China [2]School of Mechanical,Electrical and Information Engineering,Shandong University,Weihai 264200,China

出　　处：《Surface Science and Technology》2024年第1期264-274,共11页表面科学技术(英文)

基　　金：the National Natural Science Foundation of China(No.62004117);National Key R&D Program of China(2023YFB3812700,2022YFB3706600)。

摘　　要：As an intrinsic p-type transparent conductor with a wide band gap of 3.1 eV,γ-CuI full of potential has gradually attracted the attention of researchers.However,γ-CuI films deposited by various techniques generally exhibit high haze with a frosted glass-like appearance,which significantly affects the device performance.Herein,a new strategy is proposed in which true p-type CuI thin films with low haze have been successfully synthesised at room temperature.The specular transmittance of the CuI film over 85%in the visible region(400-800 nm)can be achieved.The haze of the as-preparedγ-CuI films can be as low as 0.7%.Meanwhile,the as-prepared CuI film has an FOM as high as 230 MΩ−1.This ideal stable p-type optoelectronic performance was significant among various typical p-type transparent conductive films.

关 键 词：Copper(I)iodide(CuI) Low haze P-type transparent conductive films IODINATION 

分 类 号：TN3[电子电信—物理电子学]