一种高性能带隙基准源的设计  

Design of a high-performance bandgap reference source

作　　者：王凌翔 张涛[1] 刘劲[1] WANG Lingxiang;ZHANG Tao;LIU Jin(School of Information Science and Engineering,Wuhan University of Science and Technology,Wuhan 430000,China)

机构地区：[1]武汉科技大学信息科学与工程学院,湖北武汉430000

出　　处：《电子元件与材料》2025年第1期88-94,共7页Electronic Components And Materials

基　　金：国家自然科学基金(61873196)。

摘　　要：针对传统带隙基准电压受运放失调电压影响较大,而无运放带隙基准电源的噪声抑制效果不佳的问题,设计了一种降低失调电压影响的高性能带隙基准电路。设计中通过改变三极管的连接方式使得该结构具有抑制失调电压的能力和更高的电源噪声抑制能力,从而提高了输出电压的精度和电源抑制比(PSRR)。同时,利用三极管基极电流的负温度高阶项对带隙输出进行低温曲率补偿,使得带隙基准电压具有极低的温度系数。该电路采用华虹宏力0.18μm BCD工艺,经过仿真验证,在电源电压为5 V时,静态工作电流约为6μA,基准输出电压约为1.27 V,温度系数为6.082×10^(-6)/℃。在10 Hz时,PSRR为-110.1 dB;在10 kHz时,PSRR为-70.9 dB。To address the problems of significant impact on traditional bandgap reference voltages by offset voltage of operational amplifier(op-amp)or poor noise suppression of non-op-amp bandgap reference power supplies,a high-performance bandgap reference circuit was designed to mitigate the effects of the offset voltage.By altering the connection of transistors in the design,the circuit can enhance the capabilities for suppressing offset voltage and power supply noise,which thereby improves the accuracy of the output voltage and the power supply rejection ratio(PSRR).Meanwhile,the negative temperature higher-order term of the base current of the triode was used to compensate the low-temperature curvature of the bandgap output,which gives the bandgap reference voltage a low temperature coefficient.The HHGrace 0.18μm BCD process was employed in the design.Simulation results give static operating current of about 6μA and reference output voltage of 1.27 V at power supply voltage of 5 V.The temperature coefficient is 6.082×10^(-6)/℃.The PSRR is-110.1 dB and-70.9 dB at 10 Hz and 10 kHz respectively.

关 键 词：带隙基准 高电源抑制比 低温漂 温度补偿 

分 类 号：TN432[电子电信—微电子学与固体电子学]