高压下GaAsSb纳米线室温光致发光特性研究  

Room-temperature photoluminescence in GaAsSb nanowires under high-pressure

作　　者：殷雪彤 廖敦渊 潘东[2] 王鹏[1] 刘冰冰[1] YIN Xuetong;LIAO Dunyuan;PAN Dong;†WANG Peng;LIU Bingbing(State Key Laboratory of Superhard Materials,Jilin University,Changchun 130012,China;State Key Laboratory of Semiconductor Physics and Chip Technologies,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China)

机构地区：[1]吉林大学,超硬材料国家重点实验室,长春130012 [2]中国科学院半导体研究所,半导体芯片物理与技术全国重点实验室,北京100083

出　　处：《物理学报》2025年第6期256-263,共8页Acta Physica Sinica

基　　金：国家自然科学基金(批准号:11604116,12374459);中国科学院战略重点研究项目(批准号:XDB0460000);中国科学院青年创新促进会(批准号:2017156,Y2021043)资助的课题.

摘　　要：三元砷锑化镓(GaAsSb)纳米线具有直接带隙电子结构,通过调节锑含量可实现其近红外波段发光波长在870—1700 nm范围内的超宽带调谐,在近红外微纳光学器件方面具有十分重要应用前景.但由于高密度表面态的存在,砷锑化镓纳米线室温发光效率低、难以观测,这导致其光学性质研究主要集中在低温条件下,严重阻碍了其室温条件下的光学性质的调控研究及器件化应用.本文利用高压策略结合荧光光谱与拉曼光谱技术,在室温条件下进行砷锑化镓纳米线光学性质的调控研究.研究表明,通过压力的施加,在0-2.8 GPa的压力范围内,砷锑化镓纳米线的室温荧光获得显著增强,并且发光波长可以通过压力实现原位调控.同时,砷锑化镓纳米线的发光性质与激发光波长相关,相对于473 nm激发光波长,514 nm和633 nm波长对应的发光效率更高.高压原位拉曼光谱研究表明,短波长473 nm激光辐照砷锑化镓纳米线可以产生显著的光热效应,抑制光发射,而高压策略可以有效降低光热效应对于砷锑化镓纳米线光学性质的影响.Ternary GaAsSb nanowires(NWs)have considerable potential applications in infrared optical nanodevices due to their direct bandgap and wavelength-tunable light emission which covers the range from 870 nm to 1700 nm by changing the content of Sb in GaAsSb NWs.Due to the high surface state density,the light emission efficiency of GaAsSb NWs is quite low and the light emission is difficult to observe under roomtemperature conditions.Previous studies on the optical properties of GaAsSb NWs were mainly carried out under low-temperature conditions,thereby limiting their room-temperature optical properties modulation research and room-temperature applications.In the present study,we modulate the optical properties of GaAsSb NWs under room-temperature conditions through the high-pressure strategy,by means of both photoluminescence(PL)and Raman spectroscopy.With the increase of pressure,the PL intensity of GaAsSb NWs is obviously enhanced at room temperature and the PL peak position shows a blue-shifted trend.With the change of wavelength(473 nm,514 nm,and 633 nm)of the incident laser,the excitation-wavelength-dependent PL can be observed in GaAsSb NWs.The laser with a longer wavelength(633 nm)will excite the stronger light emission.The Raman spectra of GaAsSb NWs excited by different lasers(473 nm,514 nm,and 633 nm)all show blue shift under compression.We select four pressure points(0.7 GPa,1.2 GPa,1.8 GPa,and 2.5 GPa)for the detailed comparison between the Raman spectra excited by different lasers.Under the excitation of 473 nm laser,the Raman peaks of GaAsSb NWs show an evident red-shift compared with those excited by 514 nm or 633 nm laser,which reveals the existence of temperature difference.The estimated relative temperature difference in GaAsSb NWs induced by two different lasers(473 nm and 633 nm)can reach up to 200 K.The laser with shorter wavelength will induce a stronger heating effect in GaAsSb NWs and reduce the light-emission efficiency.Under high-pressure condition,the charge transfer between the surface of

关 键 词：砷锑化镓 纳米线 高压 室温发光 

分 类 号：TS2[轻工技术与工程—食品科学与工程]