多晶金刚石片的机械磨抛工艺  

Mechanical lapping and polishing process of polycrystalline diamond wafers

作　　者：李蛟 张晓秋 王紫光 张昕 张瑜 LI Jiao;ZHANG Xiaoqiu;WANG Ziguang;ZHANG Xin;ZHANG Yu(Zhengzhou Research Institute for Abrasives Co.,Ltd.,Zhengzhou 450001,China;School of Mechanical Engineering,Dalian Jiaotong University,Dalian 116028,Liaoning,China;State Key Laboratory for High Performance Tools,Zhengzhou 450001;College of Mechanical and Electrical Engineering,Zhengzhou University of Light Industry,Zhengzhou 450002,China)

机构地区：[1]郑州磨料磨具磨削研究所有限公司,郑州450001 [2]大连交通大学机械工程学院,辽宁大连116028 [3]高性能工具全国重点实验室,郑州450001 [4]郑州轻工业大学机电工程学院,郑州450002

出　　处：《金刚石与磨料磨具工程》2025年第1期86-92,共7页Diamond & Abrasives Engineering

基　　金：国家自然科学基金(52175382,52375169);辽宁省自然科学基金博士科研启动基金(2021-BS-220,2023-BS-171)。

摘　　要：使用游离磨料进行机械研磨是金刚石平坦化的主流加工手段之一。针对多晶金刚石的材料特性,开展变参数的游离磨料机械研磨实验。通过改变磨料粒度、研磨压力、研磨液浓度,研究其对多晶金刚石片机械研磨的材料去除率和表面粗糙度的影响规律。结果表明:材料去除率随磨料粒度和研磨压力的增大而增大,随研磨液浓度的增大先增大后趋于稳定,其中磨料粒度是对去除率影响最显著的因素;而表面粗糙度随磨料粒度的减小而降低,随研磨压力和研磨液浓度的增大呈现先降低后升高的变化趋势,其中磨料粒度对多晶金刚石加工表面质量的影响最为显著。据此可以确定最适合加工多晶金刚石的工艺参数为研磨压力0.3 MPa、磨粒粒度W10(7.5~10μm)、研磨液浓度4%,此条件下加工的多晶金刚石片表面粗糙度最优,R_(a)约为96 nm,材料去除率为7.097μm/h。Objectives:Diamond is a critical material potentially or already applied in infrared windows,electronic components and acoustic devices for its excellent optical transmittance,high eletron mobility and high breakdown voltage.Mechanical lapping is one of the mainstream methods for diamond planarization.However,it is more difficult to mechanically planarize polycrystalline diamond due to the grains and the boundaries which may lead to defects and internal stress release.Variable-parameter mechanical lapping are conducted on polycrystalline diamond to investigate the effects of abrasive grain size,lapping pressure and abrasive concentration on material removal rate(RMRR)and surface roughness R_(a).Methods:A group of{100}polycrystalline diamond wafers are attached to a load plate with lapping fluid speed of 8 mL/min,rotational speed of 30 r/min and orbital speed of 45 r/min.The grain size(W7~W50),the concentration of fluid(3%~6%)and the loading pressure(0.1~0.4 MPa)are tested for a reasonable process.A surface profiler is used to observe the morphology of three equal division points(800μm×800μm)on diamond surface along the diagonal of the 5 mm×5 mm×1 mm wafer.The average roughness are used to characterize the lapping effect.Results:It is found that the RMRR increases with the increase of grain size,reaching its maximum of 25.210μm/h with grain size of W50 and R_(a) of 240 nm.But there appears micro cracks on diamond surface.The RMRR slightly increases as the grain concentration increases from 3%to 5%but decreases at concentration of 6%,varying around 11μm/h.The MRR also increases from~8μm/h to~17μm/h as the lapping pressure increases from 0.1 MPa to 0.4 MPa.Conversely,the surface roughness decrease from 240 nm to 100 nm with finer abrasive,which is a dominant factor affecting the surafce quality.The surface roughness also decreases first but increases then with higher lapping pressure and abrasive concentration.Conclusion:The optimal process parameters for polycrystalline diamond wafer are determined,namely

关 键 词：金刚石 研磨液 机械研磨 研磨压力 磨粒 

分 类 号：TN305.2[电子电信—物理电子学] TG58[金属学及工艺—金属切削加工及机床]