稀土掺杂金属氧化物薄膜晶体管研究进展  

Research Progress on Rare Earth Doped Metal Oxide Thin Film Transistors

作　　者：黄湘兰 彭俊彪[1] HUANG Xianglan;PENG Junbiao(State Key Laboratory of Luminescent Materials and Devices,South China University of Technology,Guangzhou 510641,China)

机构地区：[1]华南理工大学发光材料与器件国家重点实验室,广东广州510641

出　　处：《发光学报》2025年第3期436-451,共16页Chinese Journal of Luminescence

基　　金：国家重点研发计划(2021YFB3600800);国家自然科学基金(62074059)。

摘　　要：金属氧化物薄膜晶体管(Metal oxide thin film transistors,MOTFTs)因其具有较高的载流子迁移率和较好的电学稳定性,在大尺寸发光显示驱动背板应用方面极具潜力。此外,MOTFTs与非晶硅薄膜晶体管的制备工艺兼容,制造成本较低,具有较大市场竞争优势。然而,衡量MOTFTs性能的两个关键指标——迁移率和稳定性之间的矛盾限制了其高端显示应用。因此,开发高迁移率兼具高稳定性的MOTFTs成为研究热点和产业竞争焦点。大量研究表明,稀土掺杂氧化物有源半导体材料体系有望实现这一目标。本文重点综述兼具高迁移率和高稳定性的稀土掺杂氧化物材料设计及MOTFTs已达到的性能,探讨稀土掺杂金属氧化物薄膜晶体管(RE-MOTFTs)面临的挑战和发展潜力。Metal oxide thin film transistors(MOTFTs)have great potential for application in large-sized organic light-emitting display driver backplanes due to their high carrier mobility and good electrical stability.In addition,the fabrica-tion processes of MOTFTs are compatible with amorphous silicon thin film transistors’,resulting in their lower manufactur-ing costs and strong market advantages.However,the trade-off between mobility and stability which are the key indicators for measuring MOTFTs limits their high-end applications.Therefore,developing MOTFTs that combine high mobility with high stability has become a research hotspot and industry competition focus.Numerous studies indicate that rare earth(RE)doped oxide semiconductor materials is promising for achieving this goal.This paper focuses on reviewing the de-sign of RE doped oxide materials that achieve both high mobility and high stability,as well as the characteristic indicators that MOTFTs have reached,and discusses the changes and development potential of RE doped MOTFTs(RE-MOTFTs).

关 键 词：金属氧化物薄膜晶体管 稀土元素 迁移率 稳定性 

分 类 号：TN321.5[电子电信—物理电子学] O482.31[理学—固体物理]