Efficient Perovskite Quantum Dots Light-emitting Diodes:Challenges and Optimization  

高效钙钛矿量子点发光二极管:挑战和优化

作　　者：LI Mengjiao WANG Ye WANG Yakun LIAO Liangsheng 李梦娇;王晔;王亚坤;廖良生(苏州大学功能纳米与软物质研究院,碳基功能材料与器件重点实验室,江苏苏州215123)

机构地区：[1]Key Laboratory for Carbon-based Functional Materials&Devices,Institute of Functional Nano&Soft Materials,Soochow University,Suzhou 215123,China

出　　处：《发光学报》2025年第3期452-461,共10页Chinese Journal of Luminescence

基　　金：国家自然科学基金(62205230,62175171,62474119)。

摘　　要：Perovskite quantum dot light-emitting diodes(Pe-QLEDs)have shown immense application potential in display and lighting fields due to their narrow full-width at half maximum(FWHM)and high photoluminescence quantum yield(PLQY).Despite significant advancements in their performance,challenges such as defects and ion migration still hinder their long-term stability and operational efficiency.To address these issues,various optimization strategies,including ligand engineering,interface passivation,and self-assembly strategy,are being actively researched.This review focuses on the synthesis methods,challenges and optimization of perovskite quantum dots,which are critical for the commercialization and large-scale production of high-performance and stable Pe-QLEDs.钙钛矿量子点发光二极管(Pe-QLEDs)由于其窄半峰宽和高光致发光量子产率(PLQY)而在显示和照明领域展现出巨大的应用潜力。尽管其性能已取得显著进展,但依然面临缺陷、离子迁移等诸多挑战,影响了其长期稳定性和工作效率。为了解决这些问题,配体工程、界面钝化、自组装策略等优化手段正在被广泛研究。本综述主要从钙钛矿量子点的合成、挑战和优化三个方面进行描述,这对实现高性能和稳定PeQLEDs的商业化和大规模生产至关重要。

关 键 词：perovskite quantum dot light-emitting diodes(Pe-QLEDs) PHOTOLUMINESCENCE DEFECTS ion migration 

分 类 号：TN312.8[电子电信—物理电子学]