Passive on-chip isolators based on the thin-film lithium niobate platform  

作　　者：Jiacheng Liu Gongyu Xia Qilin Hong Pingyu Zhu Kai-Kai Zhang Keyu Xia Ping Xu Shiqiao Qin Zhihong Zhu 刘嘉成;夏功榆;洪琦琳;朱枰谕;张凯凯;夏可宇;徐平;秦石乔;朱志宏

机构地区：[1]College of Advanced Interdisciplinary Studies&Hunan Provincial Key Laboratory of Novel Nano Optoelectronic Information Materials and Devices,National University of Defense Technology,Changsha 410073,China [2]Institute for Quantum Information and State Key Laboratory of High-Performance Computing,College of Computer Science and Technology,National University of Defense Technology,Changsha 410073,China [3]College of Engineering and Applied Sciences,National Laboratory of Solid State Microstructures,and Collaborative Innovation Center of Advanced Microstructures,Nanjing University,Nanjing 210023,China

出　　处：《Chinese Physics B》2025年第3期408-413,共6页中国物理B(英文版)

基　　金：Project supported by the National Key Research and Development Program of China(Grant Nos.2022YFF0712800 and 2019YFA0308700)。

摘　　要：Optical isolators,the photonic analogs of electronic diodes,are essential for ensuring the unidirectional flow of light in optical systems,thereby mitigating the destabilizing effects of back reflections.Thin-film lithium niobate(TFLN),hailed as“the silicon of photonics,”has emerged as a pivotal material in the realm of chip-scale nonlinear optics,propelling the demand for compact optical isolators.We report a breakthrough in the development of a fully passive,integrated optical isolator on the TFLN platform,leveraging the Kerr effect to achieve an impressive 10.3 dB of isolation with a minimal insertion loss of 1.87 dB.Further theoretical simulations have demonstrated that our design,when applied to a microring resonator with a Q factor of 5×10^(6),can achieve 20 dB of isolation with an input power of merely 8 mW.This advancement underscores the immense potential of lithium niobate-based Kerr-effect isolators in propelling the integration and application of high-performance on-chip lasers,heralding a new era in integrated photonics.

关 键 词：thin-film lithium niobate Kerr effect optical isolator 

分 类 号：TN2[电子电信—物理电子学]