Perpendicular magnetic anisotropy of Pd/Co_(2)MnSi/Co/Pd multilayer  

作　　者：Xiaoqi Qin Jiaxing Tan Xianwu Xiu Wentian Cao Shuyun Wang 秦晓奇;谭家兴;修显武;曹文田;王书运

机构地区：[1]School of Physics and Electronics,Shandong Normal University,Ji’nan 250358,China

出　　处：《Chinese Physics B》2025年第3期534-539,共6页中国物理B(英文版)

基　　金：Project supported by Shandong Provincial Natural Science Foundation,China(Grant No.ZR2022ME059)。

摘　　要：Pd/Co_(2)MnSi(CMS)/Co/Pd multilayer films were designed based on the idea of combining highly spin-polarized materials with strong perpendicular magnetic anisotropy(PMA)films.The PMA of Pd/CMS/Co/Pd multilayer films was studied by optimizing the growth conditions and thickness of each film layer.The optimal structure of the multilayer films was Pd(6 nm)/CMS(5 nm)/Co(2 nm)/Pd(1 nm).Its abnormal Hall resistance(R_(Hall)),coercivity(H_(c))and effective magnetic anisotropy constant(Keff)are 0.08Ω,284 Oe and 1.36 Merg/cm^(3),respectively,which are 100%,492%,and 183%higher than the corresponding values(0.04Ω,48 Oe,and 0.48 Merg/cm^(3))of the Pd(6 nm)/Co(1 nm)/Pd(3 nm)trilayer films.The analysis shows that the increases of the above values are the result of the Pd/CMS interface effect and CMS/Co interface ferromagnetic(FM)coupling,and that it is closely related to the thickness of each film layer in the multilayer films and the growth conditions of the multilayer films.

关 键 词：perpendicular magnetic anisotropy(PMA) Co_(2)MnSi(CMS) CO abnormal Hall resistance(R_(Hall)) coercivity(H_(c)) 

分 类 号：O48[理学—固体物理]