磁控直拉法单晶硅熔料阶段氧碳杂质传输仿真研究  

Simulation Study of Oxygen and Carbon Impurity Transport in Melt Stage of Magnetic Field-Assisted Czochralski Method for Monocrystalline Silicon

作　　者：张文永 高德东 王珊[1] 安燕 吴昊昊 林海鑫 侯霖 ZHANG Wenyong;GAO Dedong;WANG Shan;AN Yan;WU Haohao;LIN Haixin;HOU Lin(School of Mechanical Engineering,Qinghai University,Xining 810000,China;Key Laboratory of New Energy Power System Intelligent Operation(Qinghai University),Xining 810000,China;Sichuan Gokin Solar Technology Co.,Ltd.,Yibin 644000,China)

机构地区：[1]青海大学机械工程学院,青海西宁810000 [2]青海大学新能源电力系统智能运行重点实验室,青海西宁810000 [3]四川高景太阳能科技有限公司,四川宜宾644000

出　　处：《山东化工》2025年第4期1-5,11,共6页Shandong Chemical Industry

基　　金：青海省科技厅项目(2023-GX-C03);宜宾市科技局项目(2023YG02);西宁市科技局重大科技专项(2022-Z-03)(2021-Y-01)。

摘　　要：18 in单晶硅熔料阶段,仅靠调节加热器功率,难以进一步降低硅熔体氧碳杂质含量,致使晶棒头部含氧量和尾部含碳量偏高。基于拉晶工艺参数和环境参数建立晶体生长二维数字化模型,模拟多场耦合下的磁控直拉法单晶炉内氧碳杂质浓度场分布,研究磁场强度、炉压和入口氩气流速三个参数作用下的炉内氧碳杂质传输情况和控制策略。仿真结果表明,外加超导磁场结合调控炉压和入口氩气流速两个气氛参数的控制策略,单晶硅熔料阶段炉内氧碳杂质含量显著降低,为实际生产中的工艺参数调节提供了仿真支撑。In the melt stage of 18 in monocrystalline silicon,it is difficult to further reduce the oxygen and carbon impurity content in the silicon melt by merely adjusting the heater power,resulting in higher oxygen content at the head and carbon content at the tail of the ingot.A two-dimensional digital model for crystal growth was established based on the pulling process parameters and environmental parameters to simulate the distribution of oxygen and carbon impurity concentration in the magnetic field-assisted Czochralski furnace under multi-field coupling.The study investigated the transport of oxygen and carbon impurities and control strategies under the influence of three parameters:magnetic field strength,furnace pressure,and inlet argon flow rate.Simulation results indicate that a control strategy combining an external superconducting magnetic field with the regulation of furnace pressure and inlet argon flow rate significantly reduces the impurity content of oxygen and carbon in the melt stage,providing a simulation model to support the adjustment of process parameters in actual production.

关 键 词：多场耦合 磁控直拉法 氧碳杂质 单晶硅 

分 类 号：O78[理学—晶体学]