GaN晶体管非傅里叶导热的反射热成像与全带跨尺度仿真对比研究  

Comparative Study of Non-Fourier Heat Conduction in GaN Transistors Using Thermoreflectance Thermal Imaging and Full-band Multiscale Simulation

作　　者：刘智珂 李含灵 沈扬 曹炳阳[1] LIU Zhike;LI Hanling;SHEN Yang;CAO Bingyang(Key Laboratory for Thermal Science and Power Engineering of Ministry of Education,School of Aerospace Engineering,Tsinghua University,Beijing 100084,China)

机构地区：[1]清华大学航天航空学院,热科学与动力工程教育部重点实验室,北京100084

出　　处：《工程热物理学报》2025年第3期884-889,共6页Journal of Engineering Thermophysics

基　　金：国家自然科学基金(No.52327809,No.52425601,No.52250273)和国家重点研发计划项目(No.2023YFB4404104)。

摘　　要：分别采用反射热成像温度场测试技术和全带跨尺度仿真针对GaN晶体管非傅里叶热输运进行研究。在GaN外延结构上设计和加工了不同尺寸的加热电极,借助反射热成像方法的高空间分辨率优势,观察到了低至500 nm尺寸热源的温度场分布,更加直接地测定了样品热点温度。基于全带声子蒙特卡洛及有限元方法的三维跨尺度仿真的模拟结果与实验值具有较好一致性,均表明声子弹道效应导致热点温度显著增加。随着热源尺寸的减小,基于傅里叶定律的预测偏差逐渐增大,表明了高分辨率温度场实验和全带跨尺度热仿真相结合对准确预测器件结温的重要性。Research on non-Fourier heat transport in GaN transistors was conducted using both thermoreflectance thermal imaging and full-band multiscale simulations.Different-sized Au heaters are designed and fabricated on GaN epitaxial structures.Leveraging the high spatial resolution advantage of thermoreflectance thermal imaging,temperature field distributions of heat sources as small as 500 nm thermal observed,enabling more direct measurement of sample hot spot tempera-tures.Simulation results from three-dimensional multiscale simulations based on full-band phonon Monte Carlo and finite element methods are in good agreement with experimental values,indicat-ing that phonon ballistic effects significantly increase hot spot temperatures.As the size of the heat source decreases,deviations from predictions based on Fourier’s law increase,highlighting the impor-tance of combining high-resolution temperature field experiments with full-band multiscale thermal simulations to accurately predict device junction temperatures.

关 键 词：高电子迁移率晶体管 非傅里叶导热 反射热成像 全带跨尺度仿真 

分 类 号：TK121[动力工程及工程热物理—工程热物理]