High-performance blue TADF OLED using two-step heat plasma-treated MoTe_(2)as a hole-injection layer  

作　　者：Chenjie Yao Wanqi Ren Tejas Dhanalaxmi Raju Ho Jin Lee Atul C.Khot Kiran A.Nirmal Tae Geun Kim 

机构地区：[1]School of Electrical Engineering,Korea University,Anam-ro 145,Seoul 02841,Republic of Korea

出　　处：《Journal of Materials Science & Technology》2024年第31期200-207,共8页材料科学技术(英文版)

基　　金：supported by the National Research Foundation of Korea,funded by the Korean Government(No.2016R1A3B1908249).

摘　　要：In the pursuit to overcome the limitations posed by traditional hole injection layers(HILs),such as PEDOT:PSS,researchers are focusing on innovative strategies to modify electrode/organic interfaces to facilitate charge-carrier injection and reduce the turn-on voltage,particularly in the context of high-efficiency organic light-emitting diodes(OLEDs).Two-dimensional materials show great potential in addressing the energy barrier challenges at electrode/organic interfaces owing to their exceptional optoelectronic properties and robust chemical stability.However,their implementation in OLEDs has been hindered by complex fabrication processes and work function(WF)mismatches.This study presents a novel approach by introducing a magnetron-sputtered MoTe_(2)as HIL via two-step O_(2) doping.This strategy enhances the crystallinity of MoTe_(2)at a relatively low annealing temperature(350℃),combined with a plasma-treated anode possessing high WF(approximately 5.05 eV),high transmittance(93%at 478 nm),and low sheet resistance(33Ω/sq).Consequently,compared with the conventional blue thermally activated delayed-fluorescence OLED using MoO_(3)as a HIL,the external quantum efficiency of the manufactured device using MoTe_(2)as a HIL was improved by 57%and turn-on voltage was reduced to 2.6 V.This study provides a new pathway for overcoming the limitations of conventional solution-based HILs and chemical vapor deposition techniques to industrialize the large-scale manufacturing and commercialization of OLEDs.

关 键 词：Transition metal dichalcogenides Hole injection layer Blue thermally activated delayed-fluorescence Organic light-emitting diodes Transparent conductive electrode Radio-frequency sputtering 

分 类 号：TN3[电子电信—物理电子学]