快速响应宽光谱二维SnSe光电探测器  

Fast-speed response wide spectrum two-dimensional SnSe photodetectors

作　　者：曹璋钰 魏彬彬 王所富 龙明生 CAO Zhangyu;WEI Binbin;WANG Suofu;LONG Mingsheng(Information Materials and Intelligent Sensing Laboratory of Anhui Province,Institutes of Physical Science and Information Technology,Anhui University,Hefei 230601,China)

机构地区：[1]安徽大学物质科学与信息技术研究院,信息材料与智能感知安徽省实验室,安徽合肥230601

出　　处：《安徽大学学报(自然科学版)》2025年第2期49-55,共7页Journal of Anhui University(Natural Science Edition)

基　　金：信息材料与智能感知安徽省实验室开放课题(IMIS202207)。

摘　　要：红外光电探测器在热成像、光通信以及夜视相机等方面具有重要的应用.然而,当前制作的红外光电探测器普遍面临低温操作、响应速度慢等问题.针对此问题,该文利用二维SnSe制作光电探测器并对该探测器的光电性能进行系统的研究.室温环境下,该探测器在波长为637nm可见光辐照下具有较高的光响应度以及超快的光响应时间,而且该探测器在波长为3250nm红外激光辐照下光响应度可达35mA·W-1,展现出优异的红外探测能力.Infrared photodetectors have important applications in thermal imaging,optical communications,and night vision cameras.However,the current fabricated infrared photodetectors generally suffer the problems of low-temperature operation and slow response speed.To address those problems,this paper proposed to use the SnSe to fabricate a photodetector.The performance of the SnSe photodetector was systematically investigated.The detector has high photoresponsivity and ultra-fast optical response time under visible light irradiation with a wavelength of 637 nm,and the photoresponsivity of the detector under infrared laser irradiation with a wavelength of 3250 nm can reach 35 mA·W-1,showing excellent infrared detection capability.

关 键 词：光电探测器 快速响应 光响应度 光响应时间 SnSe 

分 类 号：TN36[电子电信—物理电子学]