Abnormal grain growth of(110)-oriented perpendicular nanotwinned copper into ultra-large grains at low temperatures  

作　　者：Peixin Chen Chongyang Li Silin Han Tao Hang Huiqin Ling Yunwen Wu Ming Li 

机构地区：[1]State Key Laboratory of Metal Matrix Composites,School of Materials Science and Engineering,Shanghai Jiao Tong University,Shanghai 200240,China

出　　处：《Journal of Materials Science & Technology》2024年第36期61-65,共5页材料科学技术(英文版)

基　　金：sponsored by the National Natural Science Foun-dation of China(Nos.62004124,22372100,and 51991374).

摘　　要：1.Introduction Electrodeposited copper is frequently employed as an electrical interconnection material in modern electronic devices owing to its superior conductivity and electromigration resistance[1,2].Reduc-ing the electrical resistivity of Cu interconnects is an everlasting pursuit of the industry.For pure Cu,the primary approach to re-ducing its resistivity is to eliminate the crystal defects that scatter the electron transmission,especially grain boundaries(GBs).More-over,GBs are known to be the fast diffusion path for electromi-gration,which may lead to the formation of voids and protrusions[3,4].Therefore,efforts have been devoted to achieving large grains or even single crystals in Cu interconnects.

关 键 词：GRAIN COPPER RESISTIVITY 

分 类 号：TG1[金属学及工艺—金属学]