Fabricating S-scheme Sb2 S3@CdSe_(x)S_(1-x)quasi-one-dimensional heterojunction photoanodes by in-situ growth strategy towards photoelectrochemical water splitting  

作　　者：Dekang Liu Dekai Zhang Yishan Wang Enzhou Liu Hui Miao 

机构地区：[1]School of Physics,Northwest University,Xi’an 710127,China [2]State Key Laboratory of Transient Optics and Photonics,Chinese Academy of Sciences,Xi’an 710119,China [3]School of Chemical Engineering,Northwest University,Xi’an 710127,China

出　　处：《Journal of Materials Science & Technology》2024年第34期250-260,共11页材料科学技术(英文版)

基　　金：supported by the National Natural Science Foun-dation of China(No.11804274);the Natural Science Foundation of Shaanxi Province(No.2023-JC-YB-139);the Open Research Fund of State Key Laboratory of Transient Optics and Photonics,Chinese Academy of Sciences(No.SKLST202211).

摘　　要：Nowadays,energy and environmental problems are becoming increasingly prominent in society,the de-velopment of clean and environmentally friendly energy is in line with the construction of ecological civilization and energy,which have attracted the attention of many researchers over the past decades.Narrow band gap semiconductor Sb_(2)S_(3)is widely used in the area of solar cells because of its high light absorption coefficient and suitable bandgap width.However,numerous deep-level defects provide plen-tiful photogenerated carrier recombination sites,which restricts the improvement of photoelectrochem-ical properties seriously.In this work,S-scheme Sb_(2)S_(3)@CdSe_(x)S_(1-x)core-shell quasi-one-dimensional het-erojunction photoanodes were prepared on the FTO substrate by a two-step vapor transport deposition(VTD)method,chemical bath deposition(CBD)and in-situ selenization method.The results showed that CdSe_(x)S_(1-x)nanoparticles(NPs)were tightly coated on the Sb_(2)S_(3)nanorods(NRs).The photocurrent den-sity of the Sb_(2)S_(3)@CdSe_(x)S_(1-x)photoanodes was 1.61 mA cm^(-2)under 1.23 VRHE.Compared with the Sb_(2)S_(3)photoanodes(0.61 mA cm^(-2)),Sb_(2)S_(3)@CdSe_(x)S_(1-x)photoanodes obtained a 2.64-fold improvement,and the dark current was effectively reduced.It showed excellent stability and fast photocurrent response in a 600 s optical stability test.It was concluded that:(1)The charge transfer mechanism of the S-scheme can avoid the problem of high recombination rate of photogenerated charge carriers due to the defects of Sb_(2)S_(3)effectively,and realized spatial separation of photogenerated carriers.(2)The[hk 1]oriented Sb_(2)S_(3)NRs and the formed quasi-one-dimensional heterostructures promote efficient carrier transport.(3)The introduction of Se effectively regulated the band structure of CdS,slowed down the photocorrosion of S,and improved the stability of the photoelectrodes significantly.

关 键 词：Sb_(2)S_(3)nanorods Vapor transport deposition In-situ selenization S-scheme heterojunction Photoelectrochemical performance 

分 类 号：TB3[一般工业技术—材料科学与工程]