短波红外自滤波超窄带锗平面结构光电探测器  

Filterless short-wavelength infrared ultra-narrowband planar-type Ge photodetector

作　　者：方昶月 王莉 王艺飞 柳宇健 罗林保 FANG Changyue;WANG Li;WANG Yifei;LIU Yujian;LUO Linbao(School of Microelectronics,Hefei University of Technology,Hefei 230601,China)

机构地区：[1]合肥工业大学微电子学院,安徽合肥230601

出　　处：《合肥工业大学学报(自然科学版)》2025年第3期343-347,共5页Journal of Hefei University of Technology:Natural Science

基　　金：安徽省自然科学基金资助项目(2108085MF229)。

摘　　要：文章基于锗平面肖特基结构,通过调控光生载流子收集过程中的复合作用,成功研制探测波长位于1290 nm、半高宽仅为8 nm且无需滤光片的自驱动短波红外光电探测器。该器件性能稳定,抗干扰能力强,在接收1290 nm光信号时,器件的串扰值在1278~1311 nm波长范围以外均小于-10 dB,可应用于红外系统信息的采集。文章研究结果可以为相关窄带探测器的设计提供理论和实验参考。In this work,a filterless self-powered short-wavelength infrared narrowband photodetector was realized based on a planar-type Ge Schottky structure by adjusting the recombination in the photogenerated carrier collection process,with a response peak located at 1290 nm.And the full width at half maximum of the device was only 8 nm.It exhibited high stability and anti-interference ability.Unless the wavelength of the background light was in the range of 1278-1311 nm,the crosstalk value of the device remained below-10 dB.It is shown that the device can be applied to the infrared optoelectronic systems,which provides theoretical and experimental references for the design of related narrowband photodetectors.

关 键 词：窄带探测 锗 肖特基结 短波红外 光电探测器 

分 类 号：TN215[电子电信—物理电子学]