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作 者:康莎 章柯 卫亚静 王传义 KANG Sha;ZHANG Ke*;WEI Yajing;WANG Chuanyi(School of Environmental Science and Engineering,Shaanxi University of Science and Technology,Xi’an 710021,China)
机构地区:[1]陕西科技大学环境科学与工程学院,西安710021
出 处:《高等学校化学学报》2025年第4期80-91,共12页Chemical Journal of Chinese Universities
基 金:国家自然科学基金(批准号:52161145409);陕西省教育厅科学研究计划项目(批准号:23JP011)资助。
摘 要:采用简单的溶剂热法合成了一系列具有N空位的g-C_(3)N_(5)/CdS/Ti_(3)C_(2)复合光催化剂.通过缺陷工程和异质结的协同作用,所设计的最佳比例g-C_(3)N_(x)/CdS/Ti_(3)C_(2)复合材料的光催化性能分别是g-C_(3)N_(x)和CdS的2.7和2.4倍.由于光吸收率的提高和界面电荷迁移的改善,在可见光照射下,10 min内g-C_(3)N_(x)/CdS/Ti_(3)C_(2)对流动反应器内的NO去除率达到60.21%,NO_(2)的生成率仅为2.08%.通过电子顺磁共振(EPR)和捕获实验分析了活性物种并推断出光生载流子的迁移途径.此外,通过原位漫反射傅里叶变换红外光谱(in-situ DRIFTS)进一步揭示了g-C_(3)N_(x)/CdS/Ti_(3)C_(2)体系光催化去除NO的机理.研究结果为利用空位工程和异质结构的协同作用有效去除NO提供了新的思路和实验依据.The synergy of two widely developed modulation techniques,defect engineering and heterostructure construction,was integrated to substantially improve photocatalytic performance and a series of N-defective g-C_(3)N_(5)/CdS/Ti_(3)C_(2)photocatalysts were successfully constructed.Through the rational combination of vacancy engineering and multi-component charge transfer mode,the photocatalytic performance of the designed optimal g-C_(3)N_(x)/CdS/Ti_(3)C_(2)photocatalyst reached equilibrium at 60.21%within 10 min of visible light irradiation in a flow reactor,which was 2.7 and 2.4 times that of pure g-C_(3)N_(x)and CdS,respectively.Furthmore,the NO_(2)production rate of g-C_(3)N_(x)/CdS/Ti_(3)C_(2)is several times lower than other catalysts.Additionally,the charge carrier transfer pathway was deduced by analyzing the active species via electron paramagnetic resonance(EPR)and trapping experiment.The in-situ diffuse reflectance Fourier transform infrared spectroscopy(in-situ DRIFTS)experiment further revealed the mechanism of photocatalytic removal of NO in the g-C_(3)N_(x)/CdS/Ti_(3)C_(2)system.This research provides a new standpoint for the reasonable design of vacancy engineering and heterogeneous structures for effective NO removal.
关 键 词:光催化 NO g-C_(3)N_(x) Ti_(3)C_(2) CDS
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