低温下ITO薄膜的制备及其性能研究  

Preparation and Properties of ITO Films at Low Temperature

作　　者：葛新明 赵栋才 郭东龙 杨英 郑军[1] GE Xinming;ZHAO Dongcai;GUO Donglong;YANG Ying;ZHENG Jun(Key Laboratory of Green Fabrication and Surface Technology of Advanced Metal Materials,Ministry of Education,Anhui University of Technology,Maanshan 243002,Anhui,China)

机构地区：[1]安徽工业大学先进金属材料绿色制备与表面技术教育部重点实验室,安徽马鞍山243002

出　　处：《真空与低温》2025年第2期156-164,共9页Vacuum and Cryogenics

摘　　要：为了研究低温下氧流量对ITO薄膜光电性能的影响,在-15℃下,利用直流磁控溅射技术在石英玻璃上制备了ITO薄膜。结果表明,氧气流量从10 mL/min增加到30 mL/min,会促进O元素与In原子和Sn原子的结合,使氧空位状态的氧和其他状态的氧的比值从0.82降低至0.69, SnO_(2):SnO的比值从0.52增加到3.33,In_(2)O_(3):In_(2)O_(3-x)的比值从0.25增加到0.82。同时Sn原子的含量也从3.13%减小至2.87%,薄膜中载流子浓度从253.1×10^(18)cm^(-3)减小至98.9×10^(18)cm^(-3),载流子的迁移率从4.9 cm^(2)·V^(-1)·s^(-1)增大至35.98 cm^(2)·V^(-1)·s^(-1),使薄膜的电阻率由50.0×10^(-4)Ω·cm降低到17.5×10^(-4)Ω·cm。可见光区的平均透过率从42.06%增加到82.92%,提高了薄膜的导电性能和透光性能。With the rapid development of electronic products,the miniaturization and intelligence of electronic products increases the demand for lightweight and flexible electromagnetic interference shielding films,and the preparation of polymerbased electromagnetic shielding materials has become an important research subject.ITO film is commonly used as an electrostatic shielding material,and a lower deposition temperature can reduce the impact of“gas volatilization”on film quality.To investigate the effect of oxygen flow on the photoelectric properties of ITO films at low temperatures,we prepared ITO films on quartz glass using DC magnetron sputtering at−15℃.The results indicate that as the oxygen flow increases,the film surface forms a cauliflower-like distribution,resulting in a rougher texture.Simultaneously,the film transitions from a crystalline state to an amorphous state,with grain size decreasing and film structure becoming denser.When the oxygen flow rate is increased from 10 mL/min to 30 mL/min,it promotes the combination of O elements with In atoms and Sn atoms.This results in a decrease in the ratio of oxygen in the oxygen vacancy state to other states of oxygen from 0.82 to 0.69,an increase in the SnO_(2)∶SnO ratio from 0.52 to 3.33,and an increase in the In_(2)O_(3)∶In_(2)O_(3-x) ratio from 0.25 to 0.82.Additionally,the content of Sn atoms decreases from 3.13%to 2.87%.Consequently,the carrier concentration in the film decreases from 253.1×10^(18) cm^(-3) to 98.9×10^(18) cm^(-3),while the carrier mobility increases from 4.9 cm^(2)∙V^(-1)∙s^(-1) to 35.98 cm^(2)∙V^(-1)∙s^(-1).These changes lead to a reduction in the resistivity of the film from 50.0×10^(-4)Ω∙cm to 17.5×10^(-4)Ω∙cm.Furthermore,the average transmittance in the visible light region increases from 42.06%to 82.92%,enhancing both the conductivity and optical transparency of the film.At an oxygen flow rate of 25 mL/min,the film exhibits a low resistivity of 9.34×10^(-4)Ω∙cm and an average transmittance of 83.17%in th

关 键 词：ITO薄膜 氧空位 载流子 透过率 

分 类 号：TB79[一般工业技术—真空技术] TN304.055[电子电信—物理电子学]