典型含氮化合物在氮气中的等离子体特性  

Plasma Characteristics of Typical Nitrogen⁃containing Compounds in Nitrogen Atmosphere

作　　者：刘海庆 向书杰 方普懿行 李春天 沈瑞琪[1,2] 张伟 LIU Hai-qing;XIANG Shu-jie;FANG Pu-yixing;LI Chun-tian;SHEN Rui-qi;ZHANG Wei(School of Chemistry and Chemical Engineering,Nanjing University of Science and Technology,Nanjing 210094,China;Micro‑Nano Energetic Devices Key Laboratory of MIIT,Nanjing 210094,China;Northern Special Energy Group Co.,Ltd.Xi'an Qinghua company,Xi'an 710025,China)

机构地区：[1]南京理工大学化学与化工学院,江苏南京210094 [2]微纳含能器件工业和信息化部重点实验室,江苏南京210094 [3]北方特种能源集团西安北方庆华机电有限公司,陕西西安710025

出　　处：《含能材料》2025年第3期256-265,共10页Chinese Journal of Energetic Materials

基　　金：国家自然科学基金(12074187)。

摘　　要：作为供氮体的含氮化合物会直接影响激光作用下形成的高氮化合物的种类。为了深入认识不同含氮化合物供氮体对形成高氮化合物的影响,本研究利用脉冲Nd:YAG激光对氮气氛围中的NaN_(3)、Si_(3)N_(4)和P_(3)N_(5)三种典型含氮化合物进行溅射,使用光谱仪记录并分析了瞬态中间产物的等离子体特性及其演化过程。研究结果表明,激光烧蚀NaN3产生的氮原子(NⅠ)、一价氮离子(NⅡ)和三价氮离子(NⅣ)数量最多,氮等离子体存在时间也最长,NⅠ、NⅡ和NⅢ的最大存在时间分别达到39400,39400 ns和19450 ns。在三种目标供氮体中,激光溅射氮气中NaN3最有可能形成高含氮或全氮原子簇。Nitrogen-containing compounds,acting as nitrogen donors,directly influence the types of high nitrogen compounds formed under laser irradiation.To understand the impact of various nitrogen-containing compounds on the formation of high-nitrogen compounds,three representative compounds NaN_(3),Si_(3)N_(4) and P_(3)N_(5) were ablated using a pulsed Nd:YAG laser in a nitrogen atmosphere.The plasma characteristics and the evolution of the transient intermediates generated by laser sputtering were investigated by transient spectrometer.The findings indicate that the laser ablation of NaN_(3) yields the highest number of nitrogen atoms(NⅠ),monovalent nitrogen ions(NⅡ),and trivalent nitrogen ions(NⅢ),with the longest duration of nitrogen plasma.The lifetimes of NⅠ,NⅡ,and NⅢreached 39,400 ns,39,400 ns,and 19,450 ns,respectively.Among the three nitrogen donors,the laser ablation of NaN3 in a nitrogen atmosphere is most likely to result in the formation of high-nitrogen or all-nitrogen compounds.

关 键 词：光谱 脉冲激光 含氮化合物 氮等离子体 

分 类 号：TJ5[兵器科学与技术—军事化学与烟火技术] TN2[电子电信—物理电子学]